JPH0587986B2 - - Google Patents

Info

Publication number
JPH0587986B2
JPH0587986B2 JP59123553A JP12355384A JPH0587986B2 JP H0587986 B2 JPH0587986 B2 JP H0587986B2 JP 59123553 A JP59123553 A JP 59123553A JP 12355384 A JP12355384 A JP 12355384A JP H0587986 B2 JPH0587986 B2 JP H0587986B2
Authority
JP
Japan
Prior art keywords
polysilicon
manufacturing
resistance element
annealing
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59123553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074466A (ja
Inventor
Shaa Rajibu
Rii Hyuui Samueru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS6074466A publication Critical patent/JPS6074466A/ja
Publication of JPH0587986B2 publication Critical patent/JPH0587986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
JP59123553A 1983-06-17 1984-06-15 ポリシリコン抵抗素子の製造方法及び該素子を用いた集積回路 Granted JPS6074466A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/505,523 US4579600A (en) 1983-06-17 1983-06-17 Method of making zero temperature coefficient of resistance resistors
US505523 1983-06-17

Publications (2)

Publication Number Publication Date
JPS6074466A JPS6074466A (ja) 1985-04-26
JPH0587986B2 true JPH0587986B2 (enExample) 1993-12-20

Family

ID=24010664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59123553A Granted JPS6074466A (ja) 1983-06-17 1984-06-15 ポリシリコン抵抗素子の製造方法及び該素子を用いた集積回路

Country Status (2)

Country Link
US (1) US4579600A (enExample)
JP (1) JPS6074466A (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3685002D1 (de) * 1985-10-16 1992-05-27 Texas Instruments Inc Methode zur herstellung einer logischen matrix mit vergrabenen schottkykontakten und ein dadurch hergestelltes bauelement.
US4898838A (en) * 1985-10-16 1990-02-06 Texas Instruments Incorporated Method for fabricating a poly emitter logic array
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
US5240511A (en) * 1987-02-20 1993-08-31 National Semiconductor Corporation Lightly doped polycrystalline silicon resistor having a non-negative temperature coefficient
US4762801A (en) * 1987-02-20 1988-08-09 National Semiconductor Corporation Method of fabricating polycrystalline silicon resistors having desired temperature coefficients
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
GB2215123B (en) * 1988-02-16 1990-10-24 Stc Plc Improvement in integrated circuits
JP2754555B2 (ja) * 1988-03-11 1998-05-20 ソニー株式会社 半導体装置の製造方法
JPH02137325A (ja) * 1988-11-18 1990-05-25 Fuji Electric Co Ltd 非晶質シリコン表面に対する不活性化処理方法
EP0382415B1 (en) * 1989-02-09 1994-09-28 Sony Corporation Semiconductor integrated circuit devices
US5457062A (en) * 1989-06-30 1995-10-10 Texas Instruments Incorporated Method for forming gigaohm load for BiCMOS process
US5047826A (en) * 1989-06-30 1991-09-10 Texas Instruments Incorporated Gigaohm load resistor for BICMOS process
US5171702A (en) * 1989-07-21 1992-12-15 Texas Instruments Incorporated Method for forming a thick base oxide in a BiCMOS process
JP2890601B2 (ja) * 1990-02-08 1999-05-17 株式会社デンソー 半導体センサ
JP3315730B2 (ja) * 1991-08-26 2002-08-19 マイクロリス、コーパレイシャン ピエゾ抵抗半導体センサ・ゲージ及びこれを作る方法
US5212108A (en) * 1991-12-13 1993-05-18 Honeywell Inc. Fabrication of stabilized polysilicon resistors for SEU control
US5585776A (en) * 1993-11-09 1996-12-17 Research Foundation Of The State University Of Ny Thin film resistors comprising ruthenium oxide
US5489547A (en) * 1994-05-23 1996-02-06 Texas Instruments Incorporated Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient
US5646057A (en) * 1994-07-25 1997-07-08 Taiwan Semiconductor Manufacturing Company Method for a MOS device manufacturing
JP3571765B2 (ja) * 1994-08-04 2004-09-29 三菱電機株式会社 半導体圧力検出装置
JP2825074B2 (ja) * 1995-10-25 1998-11-18 日本電気株式会社 半導体装置の製造方法
US6372592B1 (en) 1996-12-18 2002-04-16 United States Of America As Represented By The Secretary Of The Navy Self-aligned MOSFET with electrically active mask
US6315384B1 (en) 1999-03-08 2001-11-13 Hewlett-Packard Company Thermal inkjet printhead and high-efficiency polycrystalline silicon resistor system for use therein
US6319743B1 (en) 1999-04-14 2001-11-20 Mykrolis Corporation Method of making thin film piezoresistive sensor
US6238993B1 (en) 1999-04-27 2001-05-29 Taiwan Semiconductor Manufacturing Company Polysilicon load for 4T SRAM operation at cold temperatures
US6351021B1 (en) * 1999-07-01 2002-02-26 Intersil Americas Inc. Low temperature coefficient resistor (TCRL)
US6267471B1 (en) 1999-10-26 2001-07-31 Hewlett-Packard Company High-efficiency polycrystalline silicon resistor system for use in a thermal inkjet printhead
US6225684B1 (en) 2000-02-29 2001-05-01 Texas Instruments Tucson Corporation Low temperature coefficient leadframe
JP4389359B2 (ja) * 2000-06-23 2009-12-24 日本電気株式会社 薄膜トランジスタ及びその製造方法
DE10049455A1 (de) * 2000-10-06 2002-04-11 Daimler Chrysler Ag Vorrichtung zum Schutz vor elektrostatischer Aufladung einer Batterie
JP2004006466A (ja) * 2002-05-31 2004-01-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7406397B2 (en) * 2004-09-02 2008-07-29 International Business Machines Corporation Self heating monitor for SiGe and SOI CMOS devices
US10096609B2 (en) 2015-02-16 2018-10-09 Globalfoundries Inc. Modified tungsten silicon
US10390433B2 (en) 2015-03-31 2019-08-20 Texas Instruments Incorporated Methods of forming conductive and resistive circuit structures in an integrated circuit or printed circuit board
US9595518B1 (en) 2015-12-15 2017-03-14 Globalfoundries Inc. Fin-type metal-semiconductor resistors and fabrication methods thereof
US20200361782A1 (en) * 2019-05-16 2020-11-19 Sciosense B.V. Photo-annealing in Metal Oxide Sensors

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007297A (en) * 1971-09-20 1977-02-08 Rca Corporation Method of treating semiconductor device to improve its electrical characteristics
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor
JPS5129883A (enExample) * 1974-09-06 1976-03-13 Hitachi Ltd
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
JPS5444880A (en) * 1977-09-16 1979-04-09 Nec Corp Manufacture of semiconductor device
US4144100A (en) * 1977-12-02 1979-03-13 General Motors Corporation Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US4266986A (en) * 1979-11-29 1981-05-12 Bell Telephone Laboratories, Incorporated Passivation of defects in laser annealed semiconductors
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
US4364779A (en) * 1980-08-04 1982-12-21 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor devices including double annealing steps for radiation hardening
JPS57133661A (en) * 1981-02-10 1982-08-18 Matsushita Electric Ind Co Ltd Heat treatment for polycrystalline semiconductor
US4319954A (en) * 1981-02-27 1982-03-16 Rca Corporation Method of forming polycrystalline silicon lines and vias on a silicon substrate
IL63856A (en) * 1981-09-16 1984-12-31 Beta Eng & Dev Ltd Three dimensional digitizer for digitizing the surface contour of a solid body
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors

Also Published As

Publication number Publication date
JPS6074466A (ja) 1985-04-26
US4579600A (en) 1986-04-01

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees