JPS6342406B2 - - Google Patents
Info
- Publication number
- JPS6342406B2 JPS6342406B2 JP56030113A JP3011381A JPS6342406B2 JP S6342406 B2 JPS6342406 B2 JP S6342406B2 JP 56030113 A JP56030113 A JP 56030113A JP 3011381 A JP3011381 A JP 3011381A JP S6342406 B2 JPS6342406 B2 JP S6342406B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- polycrystalline silicon
- resistor
- heat treatment
- semiconductor thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030113A JPS57143803A (en) | 1981-03-03 | 1981-03-03 | Method of forming resisotr |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56030113A JPS57143803A (en) | 1981-03-03 | 1981-03-03 | Method of forming resisotr |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143803A JPS57143803A (en) | 1982-09-06 |
| JPS6342406B2 true JPS6342406B2 (enExample) | 1988-08-23 |
Family
ID=12294718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56030113A Granted JPS57143803A (en) | 1981-03-03 | 1981-03-03 | Method of forming resisotr |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143803A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6242238U (enExample) * | 1985-08-31 | 1987-03-13 | ||
| JPH05251377A (ja) * | 1992-10-05 | 1993-09-28 | Seiko Epson Corp | 半導体装置の製造方法 |
-
1981
- 1981-03-03 JP JP56030113A patent/JPS57143803A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| JAPANESE JOURNAL OF APPLIED PHYSICS=1980 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57143803A (en) | 1982-09-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4309224A (en) | Method for manufacturing a semiconductor device | |
| US4482393A (en) | Method of activating implanted ions by incoherent light beam | |
| US4229502A (en) | Low-resistivity polycrystalline silicon film | |
| US4198246A (en) | Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film | |
| US4672740A (en) | Beam annealed silicide film on semiconductor substrate | |
| JPH0587986B2 (enExample) | ||
| JPS6281709A (ja) | 半導体装置の製造方法 | |
| US4284659A (en) | Insulation layer reflow | |
| EP0193331B1 (en) | Process for forming a doped polysilicon pattern | |
| EP0045593B1 (en) | Process for producing semiconductor device | |
| JPS6342406B2 (enExample) | ||
| JPH0377657B2 (enExample) | ||
| JPS62104021A (ja) | シリコン半導体層の形成方法 | |
| JP2872425B2 (ja) | 半導体デバイスの形成方法 | |
| JPS6250972B2 (enExample) | ||
| JPS6250971B2 (enExample) | ||
| JP2870933B2 (ja) | 半導体装置の製造方法 | |
| US4496608A (en) | P-Glass reflow technique | |
| JP2530157B2 (ja) | 透明基板の選択的加熱方法 | |
| JPH0210569B2 (enExample) | ||
| US3469308A (en) | Fabrication of semiconductive devices | |
| JPS62271420A (ja) | 半導体基体の処理装置 | |
| JPH0426219B2 (enExample) | ||
| JPS6175517A (ja) | 化合物半導体基板のアニ−ル法 | |
| JP3084089B2 (ja) | 半導体装置用基板及びその製造方法 |