JPH0587174B2 - - Google Patents
Info
- Publication number
- JPH0587174B2 JPH0587174B2 JP28718288A JP28718288A JPH0587174B2 JP H0587174 B2 JPH0587174 B2 JP H0587174B2 JP 28718288 A JP28718288 A JP 28718288A JP 28718288 A JP28718288 A JP 28718288A JP H0587174 B2 JPH0587174 B2 JP H0587174B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- wiring
- arsenic
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 33
- JEMGLEPMXOIVNS-UHFFFAOYSA-N arsenic copper Chemical compound [Cu].[As] JEMGLEPMXOIVNS-UHFFFAOYSA-N 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 229910000967 As alloy Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28718288A JPH02132834A (ja) | 1988-11-14 | 1988-11-14 | 半導体装置の配線構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28718288A JPH02132834A (ja) | 1988-11-14 | 1988-11-14 | 半導体装置の配線構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02132834A JPH02132834A (ja) | 1990-05-22 |
| JPH0587174B2 true JPH0587174B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=17714140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28718288A Granted JPH02132834A (ja) | 1988-11-14 | 1988-11-14 | 半導体装置の配線構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02132834A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040064191A (ko) * | 2003-01-09 | 2004-07-16 | 김정식 | 적층박막전주가공물과 그 제작방법. |
| US8560990B2 (en) | 2010-01-13 | 2013-10-15 | International Business Machines Corporation | Method of managing electro migration in logic designs and design structure thereof |
-
1988
- 1988-11-14 JP JP28718288A patent/JPH02132834A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02132834A (ja) | 1990-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3404057B2 (ja) | 電子デバイスの製造方法 | |
| TW200401398A (en) | Method of forming multi layer conductive line in semiconductor device | |
| US5266519A (en) | Method for forming a metal conductor in semiconductor device | |
| JP3510085B2 (ja) | 銅の選択堆積方法および接着性導電体界面 | |
| EP0903781B1 (en) | Method of forming embedded copper interconnections | |
| JPS62290153A (ja) | 多レベル金属集積回路の製造方法 | |
| JPH06181212A (ja) | 半導体装置の製造方法 | |
| JP2004000006U6 (ja) | 半導体装置 | |
| JPH0587174B2 (enrdf_load_stackoverflow) | ||
| KR940003566B1 (ko) | 반도체 장치의 다층배선의 형성방법 | |
| JPH0945688A (ja) | 配線構造及びその形成方法 | |
| KR100282231B1 (ko) | 반도체 장치의 배선 제조 방법 | |
| JPS61242039A (ja) | 半導体装置 | |
| JPS61214538A (ja) | 配線構造体の製造方法 | |
| JP3243381B2 (ja) | 配線層の形成方法 | |
| JPS59501845A (ja) | 集積回路のためのアルミニウム−金属シリサイドの相互接続構造及びその製造方法 | |
| KR20030053673A (ko) | 반도체소자 및 그 제조방법 | |
| JPH1116913A (ja) | 半導体装置及びその製造方法 | |
| JP3323264B2 (ja) | 半導体装置の製造方法 | |
| JPS6244813B2 (enrdf_load_stackoverflow) | ||
| JPS62291948A (ja) | 金属薄膜配線およびその製造方法 | |
| JPS62244150A (ja) | 低い割合のバナジウムを含むアルミニウムの相互接続層を有した半導体装置及び方法 | |
| KR950007571B1 (ko) | 반도체소자의 금속배선 형성방법 | |
| KR0157876B1 (ko) | 반도체 소자의 배선 제조방법 | |
| JPS59189657A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |