JPH0587137B2 - - Google Patents
Info
- Publication number
- JPH0587137B2 JPH0587137B2 JP61169223A JP16922386A JPH0587137B2 JP H0587137 B2 JPH0587137 B2 JP H0587137B2 JP 61169223 A JP61169223 A JP 61169223A JP 16922386 A JP16922386 A JP 16922386A JP H0587137 B2 JPH0587137 B2 JP H0587137B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- wiring
- layer
- forming
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61169223A JPS6325976A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61169223A JPS6325976A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6325976A JPS6325976A (ja) | 1988-02-03 |
| JPH0587137B2 true JPH0587137B2 (instruction) | 1993-12-15 |
Family
ID=15882501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61169223A Granted JPS6325976A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6325976A (instruction) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2753058B2 (ja) * | 1989-07-27 | 1998-05-18 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2838836B2 (ja) * | 1990-04-26 | 1998-12-16 | 富士通株式会社 | 半導体集積回路及び半導体集積回路装置 |
| JPH104092A (ja) * | 1996-06-14 | 1998-01-06 | Nec Corp | 半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020548A (ja) * | 1983-07-15 | 1985-02-01 | Hitachi Ltd | 集積回路における入力保護装置 |
| JPS6037160A (ja) * | 1983-08-08 | 1985-02-26 | Nec Corp | 半導体集積回路装置 |
-
1986
- 1986-07-18 JP JP61169223A patent/JPS6325976A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6325976A (ja) | 1988-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07183302A (ja) | 金属層の形成及びボンディング方法 | |
| US3995301A (en) | Novel integratable Schottky Barrier structure and a method for the fabrication thereof | |
| JP4216588B2 (ja) | キャパシタの製造方法 | |
| US4729969A (en) | Method for forming silicide electrode in semiconductor device | |
| US4718977A (en) | Process for forming semiconductor device having multi-thickness metallization | |
| US7638412B2 (en) | Method and system for reducing charge damage in silicon-on-insulator technology | |
| JPH0587137B2 (instruction) | ||
| JPS609159A (ja) | 半導体装置 | |
| US20170154974A1 (en) | Semiconductor Device and Method for Producing a Semiconductor Device | |
| JP3311759B2 (ja) | スクリーン構造を有する集積回路およびその製造方法 | |
| EP0110656B1 (en) | Semiconductor device and method of manufacturing the same | |
| JPH0241902B2 (instruction) | ||
| JPS6020568A (ja) | 半導体装置 | |
| KR910007513B1 (ko) | 반도체장치의 배선접속부 | |
| JP2719569B2 (ja) | 半導体装置 | |
| JPS61150376A (ja) | 半導体装置 | |
| JPH0441499B2 (instruction) | ||
| KR930011461B1 (ko) | 반도체 집접회로의 서브미크론 전극배선 형성방법 | |
| JPH0462838A (ja) | 半導体装置 | |
| GB1594067A (en) | Semiconductor devices and their manufacture | |
| JPH01243543A (ja) | 半導体装置 | |
| JPS59229866A (ja) | 半導体装置 | |
| JPH03276763A (ja) | 半導体装置 | |
| JPH022131A (ja) | 半導体集積回路装置 | |
| JPH11111719A (ja) | 半導体装置およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |