JPH0586674B2 - - Google Patents

Info

Publication number
JPH0586674B2
JPH0586674B2 JP59042411A JP4241184A JPH0586674B2 JP H0586674 B2 JPH0586674 B2 JP H0586674B2 JP 59042411 A JP59042411 A JP 59042411A JP 4241184 A JP4241184 A JP 4241184A JP H0586674 B2 JPH0586674 B2 JP H0586674B2
Authority
JP
Japan
Prior art keywords
thin film
region
type
source
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59042411A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60186053A (ja
Inventor
Yoshifumi Tsunekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP59042411A priority Critical patent/JPS60186053A/ja
Publication of JPS60186053A publication Critical patent/JPS60186053A/ja
Publication of JPH0586674B2 publication Critical patent/JPH0586674B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59042411A 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路 Granted JPS60186053A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042411A JPS60186053A (ja) 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59042411A JPS60186053A (ja) 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6231630A Division JP2647020B2 (ja) 1994-09-27 1994-09-27 相補型薄膜トランジスタ及びその製造方法
JP6231631A Division JP2562419B2 (ja) 1994-09-27 1994-09-27 相補型薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60186053A JPS60186053A (ja) 1985-09-21
JPH0586674B2 true JPH0586674B2 (ko) 1993-12-13

Family

ID=12635322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042411A Granted JPS60186053A (ja) 1984-03-06 1984-03-06 薄膜相補型ｍｏｓ回路

Country Status (1)

Country Link
JP (1) JPS60186053A (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6412577A (en) * 1987-07-06 1989-01-17 Canon Kk Thin film transistor
JP2940880B2 (ja) * 1990-10-09 1999-08-25 三菱電機株式会社 半導体装置およびその製造方法
JPH04206971A (ja) * 1990-11-30 1992-07-28 Sharp Corp 薄膜半導体装置
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7253440B1 (en) * 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
JP2784615B2 (ja) 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US6441758B1 (en) 1997-11-27 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
JP4651773B2 (ja) * 1999-04-06 2011-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6346730B1 (en) 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
JP4662647B2 (ja) * 2001-03-30 2011-03-30 シャープ株式会社 表示装置及びその製造方法
FR2829114B1 (fr) 2001-09-04 2004-11-12 Oreal Dispositif de conditionnement et de distribution d'un produit liquide
JP5844956B2 (ja) * 2009-03-05 2016-01-20 ルネサスエレクトロニクス株式会社 半導体装置
US20120104402A1 (en) * 2010-11-03 2012-05-03 Pei-Hua Chen Architecture of analog buffer circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113177A (en) * 1976-03-18 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5721855A (en) * 1980-07-16 1982-02-04 Toshiba Corp Manufacture of complementary mos semiconductor device
JPS5750463A (en) * 1980-09-11 1982-03-24 Toshiba Corp Complementary type mos semiconductor device
JPS5771170A (en) * 1980-10-22 1982-05-01 Toshiba Corp Manufacture of complementary mos semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113177A (en) * 1976-03-18 1977-09-22 Matsushita Electric Ind Co Ltd Semiconductor device
JPS5721855A (en) * 1980-07-16 1982-02-04 Toshiba Corp Manufacture of complementary mos semiconductor device
JPS5750463A (en) * 1980-09-11 1982-03-24 Toshiba Corp Complementary type mos semiconductor device
JPS5771170A (en) * 1980-10-22 1982-05-01 Toshiba Corp Manufacture of complementary mos semiconductor device

Also Published As

Publication number Publication date
JPS60186053A (ja) 1985-09-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term