JPH0586661B2 - - Google Patents

Info

Publication number
JPH0586661B2
JPH0586661B2 JP58216182A JP21618283A JPH0586661B2 JP H0586661 B2 JPH0586661 B2 JP H0586661B2 JP 58216182 A JP58216182 A JP 58216182A JP 21618283 A JP21618283 A JP 21618283A JP H0586661 B2 JPH0586661 B2 JP H0586661B2
Authority
JP
Japan
Prior art keywords
layer
insulating film
interlayer insulating
wiring
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58216182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60109248A (ja
Inventor
Hiroshi Ikeda
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21618283A priority Critical patent/JPS60109248A/ja
Publication of JPS60109248A publication Critical patent/JPS60109248A/ja
Publication of JPH0586661B2 publication Critical patent/JPH0586661B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP21618283A 1983-11-18 1983-11-18 半導体集積回路装置の製造方法 Granted JPS60109248A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21618283A JPS60109248A (ja) 1983-11-18 1983-11-18 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21618283A JPS60109248A (ja) 1983-11-18 1983-11-18 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60109248A JPS60109248A (ja) 1985-06-14
JPH0586661B2 true JPH0586661B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=16684571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21618283A Granted JPS60109248A (ja) 1983-11-18 1983-11-18 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60109248A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084090B2 (ja) * 1986-08-27 1996-01-17 株式会社日立製作所 Ｉｃ配線の切断方法及び装置
JPS63177539A (ja) * 1987-01-19 1988-07-21 Nec Corp 半導体装置及びその製造方法
JPS6445148A (en) * 1987-08-13 1989-02-17 Fuji Xerox Co Ltd Semiconductor device and manufacture thereof
JPH02203551A (ja) * 1989-02-02 1990-08-13 Sony Corp 多層配線形成法
US5426076A (en) * 1991-07-16 1995-06-20 Intel Corporation Dielectric deposition and cleaning process for improved gap filling and device planarization

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170550A (en) * 1981-04-15 1982-10-20 Toshiba Corp Manufacture of semiconductor device
JPS5816545A (ja) * 1981-07-23 1983-01-31 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60109248A (ja) 1985-06-14

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