JPH0585520B2 - - Google Patents

Info

Publication number
JPH0585520B2
JPH0585520B2 JP1265302A JP26530289A JPH0585520B2 JP H0585520 B2 JPH0585520 B2 JP H0585520B2 JP 1265302 A JP1265302 A JP 1265302A JP 26530289 A JP26530289 A JP 26530289A JP H0585520 B2 JPH0585520 B2 JP H0585520B2
Authority
JP
Japan
Prior art keywords
epitaxial growth
plate
growth reactor
platform
conduit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1265302A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02157189A (ja
Inventor
Furiiirinku Peetaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPH02157189A publication Critical patent/JPH02157189A/ja
Publication of JPH0585520B2 publication Critical patent/JPH0585520B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP1265302A 1988-10-14 1989-10-13 エピタキシアル成長反応器 Granted JPH02157189A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8813565A FR2638020B1 (fr) 1988-10-14 1988-10-14 Reacteur d'epitaxie a collecteur de gaz ameliore
FR8813565 1988-10-14

Publications (2)

Publication Number Publication Date
JPH02157189A JPH02157189A (ja) 1990-06-15
JPH0585520B2 true JPH0585520B2 (enExample) 1993-12-07

Family

ID=9371046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1265302A Granted JPH02157189A (ja) 1988-10-14 1989-10-13 エピタキシアル成長反応器

Country Status (5)

Country Link
US (1) US4976217A (enExample)
EP (1) EP0366173B1 (enExample)
JP (1) JPH02157189A (enExample)
DE (1) DE68908335T2 (enExample)
FR (1) FR2638020B1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JPH08306632A (ja) * 1995-04-27 1996-11-22 Shin Etsu Handotai Co Ltd 気相エピタキシャル成長装置
US5895530A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
US5964948A (en) * 1998-08-17 1999-10-12 Seh America, Inc. Exhaust insert for barrel-type epitaxial reactors
US6586343B1 (en) * 1999-07-09 2003-07-01 Applied Materials, Inc. Method and apparatus for directing constituents through a processing chamber
JP4606675B2 (ja) * 1999-07-13 2011-01-05 アイクストロン、アーゲー 化学薬品蒸気溶着室およびそれを備えたエピタクシー反応装置
EP1240366B1 (en) * 1999-12-22 2003-07-09 Aixtron AG Chemical vapor deposition reactor and process chamber for said reactor
US6716289B1 (en) 2000-08-09 2004-04-06 Itt Manufacturing Enterprises, Inc. Rigid gas collector for providing an even flow of gasses
US6666920B1 (en) 2000-08-09 2003-12-23 Itt Manufacturing Enterprises, Inc. Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
US6325855B1 (en) * 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
DE10043599A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
DE10064942A1 (de) * 2000-12-23 2002-07-04 Aixtron Ag Verfahren zum Abscheiden insbesondere kristalliner Schichten
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10124609B4 (de) * 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten
US6896738B2 (en) 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
WO2007016592A2 (en) * 2005-07-29 2007-02-08 Aviza Technology, Inc. Gas manifold valve cluster
JP2007067213A (ja) * 2005-08-31 2007-03-15 Mitsubishi Electric Corp 気相成長装置
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US8628622B2 (en) * 2005-09-12 2014-01-14 Cree, Inc. Gas driven rotation apparatus and method for forming crystalline layers
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
KR100982987B1 (ko) * 2008-04-18 2010-09-17 삼성엘이디 주식회사 화학 기상 증착 장치
US8163089B2 (en) * 2009-12-16 2012-04-24 Primestar Solar, Inc. Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate
ITLE20100001A1 (it) * 2010-03-19 2010-06-18 Antonio Andrea Gentile Sistema a palette per la raccolta-recupero di metalli in apparati per deposizione di film sottili.
KR102156795B1 (ko) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
CN108588818A (zh) * 2018-04-17 2018-09-28 陕西飞米企业管理合伙企业（有限合伙） 一种用于气相沉积设备反应室内的尾气收集环

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607591A (en) * 1985-08-06 1986-08-26 Spectrum Cvd, Inc. CVD heater control circuit
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan

Also Published As

Publication number Publication date
EP0366173A1 (fr) 1990-05-02
EP0366173B1 (fr) 1993-08-11
FR2638020A1 (fr) 1990-04-20
US4976217A (en) 1990-12-11
DE68908335D1 (de) 1993-09-16
DE68908335T2 (de) 1994-02-24
FR2638020B1 (fr) 1990-12-28
JPH02157189A (ja) 1990-06-15

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