JPH058269B2 - - Google Patents

Info

Publication number
JPH058269B2
JPH058269B2 JP59146030A JP14603084A JPH058269B2 JP H058269 B2 JPH058269 B2 JP H058269B2 JP 59146030 A JP59146030 A JP 59146030A JP 14603084 A JP14603084 A JP 14603084A JP H058269 B2 JPH058269 B2 JP H058269B2
Authority
JP
Japan
Prior art keywords
carrier
raw material
temperature
material gas
deposited film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59146030A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6126772A (ja
Inventor
Shunichi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14603084A priority Critical patent/JPS6126772A/ja
Publication of JPS6126772A publication Critical patent/JPS6126772A/ja
Publication of JPH058269B2 publication Critical patent/JPH058269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP14603084A 1984-07-16 1984-07-16 堆積膜形成方法 Granted JPS6126772A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14603084A JPS6126772A (ja) 1984-07-16 1984-07-16 堆積膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14603084A JPS6126772A (ja) 1984-07-16 1984-07-16 堆積膜形成方法

Publications (2)

Publication Number Publication Date
JPS6126772A JPS6126772A (ja) 1986-02-06
JPH058269B2 true JPH058269B2 (enrdf_load_stackoverflow) 1993-02-01

Family

ID=15398513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14603084A Granted JPS6126772A (ja) 1984-07-16 1984-07-16 堆積膜形成方法

Country Status (1)

Country Link
JP (1) JPS6126772A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963423A (en) * 1987-10-08 1990-10-16 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
EP0470516B1 (en) * 1990-08-06 1996-03-06 MITSUI TOATSU CHEMICALS, Inc. Process for producing 3,5-di(alpha-methylbenzyl)salicylic acid derivative, and use of polyvalent-metal-modified product thereof as color developer
US5326739A (en) * 1990-08-06 1994-07-05 Mitsui Toatsu Chemicals, Incorporated Process for producing 3,5-di(α-methylbenzyl)salicylic acid derivative, and use of polyvalent-metal-modified product thereof as color developer
JP2002110551A (ja) * 2000-09-27 2002-04-12 Yamanashiken Shokokai Rengokai 半導体薄膜の形成方法及び装置
JP3872363B2 (ja) 2002-03-12 2007-01-24 京セラ株式会社 Ｃａｔ−ＰＥＣＶＤ法
JP4598506B2 (ja) * 2004-12-20 2010-12-15 大陽日酸株式会社 気相成長装置
JP4719541B2 (ja) * 2005-09-16 2011-07-06 大陽日酸株式会社 半導体薄膜成長装置
TW200811310A (en) * 2006-08-23 2008-03-01 Kinik Co Apparatus for chemical gas phase thin film sedimentation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117374B2 (enrdf_load_stackoverflow) * 1971-09-22 1976-06-02
JPS5785221A (en) * 1980-11-18 1982-05-27 Seiko Epson Corp Manufacture of amorphous semiconductor thin film

Also Published As

Publication number Publication date
JPS6126772A (ja) 1986-02-06

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term