JPS6126772A - 堆積膜形成方法 - Google Patents

堆積膜形成方法

Info

Publication number
JPS6126772A
JPS6126772A JP14603084A JP14603084A JPS6126772A JP S6126772 A JPS6126772 A JP S6126772A JP 14603084 A JP14603084 A JP 14603084A JP 14603084 A JP14603084 A JP 14603084A JP S6126772 A JPS6126772 A JP S6126772A
Authority
JP
Japan
Prior art keywords
carrier
raw material
gas
film
material gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14603084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH058269B2 (enrdf_load_stackoverflow
Inventor
Shunichi Ishihara
俊一 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14603084A priority Critical patent/JPS6126772A/ja
Publication of JPS6126772A publication Critical patent/JPS6126772A/ja
Publication of JPH058269B2 publication Critical patent/JPH058269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP14603084A 1984-07-16 1984-07-16 堆積膜形成方法 Granted JPS6126772A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14603084A JPS6126772A (ja) 1984-07-16 1984-07-16 堆積膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14603084A JPS6126772A (ja) 1984-07-16 1984-07-16 堆積膜形成方法

Publications (2)

Publication Number Publication Date
JPS6126772A true JPS6126772A (ja) 1986-02-06
JPH058269B2 JPH058269B2 (enrdf_load_stackoverflow) 1993-02-01

Family

ID=15398513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14603084A Granted JPS6126772A (ja) 1984-07-16 1984-07-16 堆積膜形成方法

Country Status (1)

Country Link
JP (1) JPS6126772A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981103A (en) * 1987-10-08 1991-01-01 Anelva Corporation Apparatus for forming a metal thin film utilizing temperature controlling means
US5274150A (en) * 1990-08-06 1993-12-28 Mitsui Toatsu Chemicals, Incorporated Process for producing 3,5-di(α-methylbenzyl)salicyclic acid derivative, and use of polyvalent-metal-modified product thereof as color developer
US5326739A (en) * 1990-08-06 1994-07-05 Mitsui Toatsu Chemicals, Incorporated Process for producing 3,5-di(α-methylbenzyl)salicylic acid derivative, and use of polyvalent-metal-modified product thereof as color developer
EP1193325A1 (en) * 2000-09-27 2002-04-03 Yamanashi Prefectural Federation of Societies, of Commerce and Industry Process and apparatus for forming semiconductor thin film
US7001831B2 (en) 2002-03-12 2006-02-21 Kyocera Corporation Method for depositing a film on a substrate using Cat-PACVD
JP2006173540A (ja) * 2004-12-20 2006-06-29 Taiyo Nippon Sanso Corp 気相成長装置
JP2007081315A (ja) * 2005-09-16 2007-03-29 Taiyo Nippon Sanso Corp 半導体薄膜成長装置
JP2008050683A (ja) * 2006-08-23 2008-03-06 Chugoku Sarin Kigyo Kofun Yugenkoshi Ｃｖｄ設備

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839171A (enrdf_load_stackoverflow) * 1971-09-22 1973-06-08
JPS5785221A (en) * 1980-11-18 1982-05-27 Seiko Epson Corp Manufacture of amorphous semiconductor thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839171A (enrdf_load_stackoverflow) * 1971-09-22 1973-06-08
JPS5785221A (en) * 1980-11-18 1982-05-27 Seiko Epson Corp Manufacture of amorphous semiconductor thin film

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981103A (en) * 1987-10-08 1991-01-01 Anelva Corporation Apparatus for forming a metal thin film utilizing temperature controlling means
US5274150A (en) * 1990-08-06 1993-12-28 Mitsui Toatsu Chemicals, Incorporated Process for producing 3,5-di(α-methylbenzyl)salicyclic acid derivative, and use of polyvalent-metal-modified product thereof as color developer
US5326739A (en) * 1990-08-06 1994-07-05 Mitsui Toatsu Chemicals, Incorporated Process for producing 3,5-di(α-methylbenzyl)salicylic acid derivative, and use of polyvalent-metal-modified product thereof as color developer
EP1193325A1 (en) * 2000-09-27 2002-04-03 Yamanashi Prefectural Federation of Societies, of Commerce and Industry Process and apparatus for forming semiconductor thin film
US6472299B2 (en) 2000-09-27 2002-10-29 Yamanashi Prefectural Federation Of Societies Of Commerce And Industry Method and apparatus for treating a substrate with hydrogen radicals at a temperature of less than 40 K
KR100787285B1 (ko) * 2000-09-27 2007-12-20 야마나시 쇼꼬카이 렌고카이 반도체 박막을 형성하는 공정 및 장치
US7001831B2 (en) 2002-03-12 2006-02-21 Kyocera Corporation Method for depositing a film on a substrate using Cat-PACVD
JP2006173540A (ja) * 2004-12-20 2006-06-29 Taiyo Nippon Sanso Corp 気相成長装置
JP2007081315A (ja) * 2005-09-16 2007-03-29 Taiyo Nippon Sanso Corp 半導体薄膜成長装置
JP2008050683A (ja) * 2006-08-23 2008-03-06 Chugoku Sarin Kigyo Kofun Yugenkoshi Ｃｖｄ設備

Also Published As

Publication number Publication date
JPH058269B2 (enrdf_load_stackoverflow) 1993-02-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term