JPH0582071B2 - - Google Patents

Info

Publication number
JPH0582071B2
JPH0582071B2 JP58133329A JP13332983A JPH0582071B2 JP H0582071 B2 JPH0582071 B2 JP H0582071B2 JP 58133329 A JP58133329 A JP 58133329A JP 13332983 A JP13332983 A JP 13332983A JP H0582071 B2 JPH0582071 B2 JP H0582071B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
wiring
insulating film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58133329A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6025254A (ja
Inventor
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58133329A priority Critical patent/JPS6025254A/ja
Publication of JPS6025254A publication Critical patent/JPS6025254A/ja
Publication of JPH0582071B2 publication Critical patent/JPH0582071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58133329A 1983-07-21 1983-07-21 集積回路の製造方法 Granted JPS6025254A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58133329A JPS6025254A (ja) 1983-07-21 1983-07-21 集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58133329A JPS6025254A (ja) 1983-07-21 1983-07-21 集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS6025254A JPS6025254A (ja) 1985-02-08
JPH0582071B2 true JPH0582071B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-11-17

Family

ID=15102164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58133329A Granted JPS6025254A (ja) 1983-07-21 1983-07-21 集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS6025254A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2891932B2 (ja) * 1996-05-30 1999-05-17 山形日本電気株式会社 縦型電界効果トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128966A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device

Also Published As

Publication number Publication date
JPS6025254A (ja) 1985-02-08

Similar Documents

Publication Publication Date Title
US5442223A (en) Semiconductor device with stress relief
JPH0834310B2 (ja) 半導体装置の製造方法
JPH06252359A (ja) 半導体装置の製造方法
JPH0586663B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US6271064B2 (en) Thin film transistor and method of manufacturing the same
JP2003298047A (ja) 半導体装置及びその製造方法
KR940001505B1 (ko) 반도체장치
JP3502509B2 (ja) Ｃｍｏｓ構造を備えた集積回路及びその製造方法
JP2560376B2 (ja) Ｍｏｓトランジスタの製造方法
JPH098135A (ja) 半導体装置の製造方法
JPH10335660A (ja) 半導体装置およびその製造方法
JP2509708B2 (ja) Ｓｏｉ型半導体装置及びその製造方法
JPH0582071B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0795568B2 (ja) 半導体記憶装置
US6521517B1 (en) Method of fabricating a gate electrode using a second conductive layer as a mask in the formation of an insulating layer by oxidation of a first conductive layer
JPH0239091B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH08162523A (ja) 半導体装置及びその製造方法
JP2531688B2 (ja) 半導体装置の製造方法
JPH04186733A (ja) 半導体装置及びその製造方法
JPS6154661A (ja) 半導体装置の製造方法
JPH06196707A (ja) 縦型絶縁ゲート型トランジスタの製法
JP2712889B2 (ja) 半導体装置の製造方法
JPH07335873A (ja) 半導体装置の製造方法
JPH0571191B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0629531A (ja) 半導体装置の製造方法