JPH0579184B2 - - Google Patents

Info

Publication number
JPH0579184B2
JPH0579184B2 JP62200177A JP20017787A JPH0579184B2 JP H0579184 B2 JPH0579184 B2 JP H0579184B2 JP 62200177 A JP62200177 A JP 62200177A JP 20017787 A JP20017787 A JP 20017787A JP H0579184 B2 JPH0579184 B2 JP H0579184B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
silicon film
hydrogen
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62200177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6442851A (en
Inventor
Fumihiko Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62200177A priority Critical patent/JPS6442851A/ja
Publication of JPS6442851A publication Critical patent/JPS6442851A/ja
Publication of JPH0579184B2 publication Critical patent/JPH0579184B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP62200177A 1987-08-10 1987-08-10 Manufacture of integrated circuit Granted JPS6442851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62200177A JPS6442851A (en) 1987-08-10 1987-08-10 Manufacture of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200177A JPS6442851A (en) 1987-08-10 1987-08-10 Manufacture of integrated circuit

Publications (2)

Publication Number Publication Date
JPS6442851A JPS6442851A (en) 1989-02-15
JPH0579184B2 true JPH0579184B2 (enrdf_load_stackoverflow) 1993-11-01

Family

ID=16420074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200177A Granted JPS6442851A (en) 1987-08-10 1987-08-10 Manufacture of integrated circuit

Country Status (1)

Country Link
JP (1) JPS6442851A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2601136B2 (ja) * 1993-05-07 1997-04-16 日本電気株式会社 半導体装置の製造方法
JPH0955381A (ja) * 1995-08-11 1997-02-25 S I I R D Center:Kk 半導体集積回路の製造方法
JP2825074B2 (ja) * 1995-10-25 1998-11-18 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6442851A (en) 1989-02-15

Similar Documents

Publication Publication Date Title
JPS6242385B2 (enrdf_load_stackoverflow)
JPS6173370A (ja) 半導体装置及びその製造方法
US4525733A (en) Patterning method for reducing hillock density in thin metal films and a structure produced thereby
JPH0579184B2 (enrdf_load_stackoverflow)
JP3167362B2 (ja) バイポーラ型ｍｏｓ半導体装置の製造方法
JP2666565B2 (ja) 半導体装置の製造方法
JPH0581054B2 (enrdf_load_stackoverflow)
JPS59169179A (ja) 半導体集積回路装置
JPS61228661A (ja) 半導体装置及びその製造方法
JPH022633A (ja) Ｍｉｓ電界効果半導体装置の製造方法
JPH02281654A (ja) 半導体記憶装置
JP3538969B2 (ja) ポリシリコン半導体層の酸化膜形成方法
KR850000037B1 (ko) 셀프얼라인 금속전극 복합 mos의 제조방법
JPS61278163A (ja) 薄膜トランジスタの製造方法
JPS6097628A (ja) 半導体装置の製造方法
JPS59103377A (ja) 半導体装置の製造方法
JPS5943832B2 (ja) 半導体装置の製造方法
JPH0254539A (ja) 縦型ｍｏｓ　ｆｅｔの製造方法
JPS60242662A (ja) 半導体装置
JPS6230364A (ja) Ｍｉｓ半導体装置の製法
JPH0441510B2 (enrdf_load_stackoverflow)
JPS59222939A (ja) 半導体装置
JPS6148778B2 (enrdf_load_stackoverflow)
JPH05129593A (ja) 半導体装置の製造方法
JPS5980971A (ja) Ｍｉｓ半導体装置の製法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees