JPS6442851A - Manufacture of integrated circuit - Google Patents
Manufacture of integrated circuitInfo
- Publication number
- JPS6442851A JPS6442851A JP62200177A JP20017787A JPS6442851A JP S6442851 A JPS6442851 A JP S6442851A JP 62200177 A JP62200177 A JP 62200177A JP 20017787 A JP20017787 A JP 20017787A JP S6442851 A JPS6442851 A JP S6442851A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- resistance value
- film
- silicon film
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200177A JPS6442851A (en) | 1987-08-10 | 1987-08-10 | Manufacture of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62200177A JPS6442851A (en) | 1987-08-10 | 1987-08-10 | Manufacture of integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6442851A true JPS6442851A (en) | 1989-02-15 |
| JPH0579184B2 JPH0579184B2 (enrdf_load_stackoverflow) | 1993-11-01 |
Family
ID=16420074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62200177A Granted JPS6442851A (en) | 1987-08-10 | 1987-08-10 | Manufacture of integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442851A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420053A (en) * | 1993-05-07 | 1995-05-30 | Nec Corporation | Method for manufacturing semiconductor device having bipolar transistor and polycrystalline silicon resistor |
| WO1997007545A1 (fr) * | 1995-08-11 | 1997-02-27 | Seiko Instruments R & D Center Inc. | Procede de fabrication d'un circuit integre a semi-conducteur |
| JPH09121024A (ja) * | 1995-10-25 | 1997-05-06 | Nec Corp | 半導体装置とその製造方法 |
-
1987
- 1987-08-10 JP JP62200177A patent/JPS6442851A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420053A (en) * | 1993-05-07 | 1995-05-30 | Nec Corporation | Method for manufacturing semiconductor device having bipolar transistor and polycrystalline silicon resistor |
| WO1997007545A1 (fr) * | 1995-08-11 | 1997-02-27 | Seiko Instruments R & D Center Inc. | Procede de fabrication d'un circuit integre a semi-conducteur |
| JPH09121024A (ja) * | 1995-10-25 | 1997-05-06 | Nec Corp | 半導体装置とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579184B2 (enrdf_load_stackoverflow) | 1993-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |