JPH0578949B2 - - Google Patents

Info

Publication number
JPH0578949B2
JPH0578949B2 JP60056018A JP5601885A JPH0578949B2 JP H0578949 B2 JPH0578949 B2 JP H0578949B2 JP 60056018 A JP60056018 A JP 60056018A JP 5601885 A JP5601885 A JP 5601885A JP H0578949 B2 JPH0578949 B2 JP H0578949B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
exhibiting
semiconductor layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60056018A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61216363A (ja
Inventor
Makoto Hideshima
Wataru Takahashi
Masashi Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60056018A priority Critical patent/JPS61216363A/ja
Publication of JPS61216363A publication Critical patent/JPS61216363A/ja
Publication of JPH0578949B2 publication Critical patent/JPH0578949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
JP60056018A 1985-03-22 1985-03-22 伝導度変調型半導体装置 Granted JPS61216363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60056018A JPS61216363A (ja) 1985-03-22 1985-03-22 伝導度変調型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60056018A JPS61216363A (ja) 1985-03-22 1985-03-22 伝導度変調型半導体装置

Publications (2)

Publication Number Publication Date
JPS61216363A JPS61216363A (ja) 1986-09-26
JPH0578949B2 true JPH0578949B2 (cs) 1993-10-29

Family

ID=13015320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60056018A Granted JPS61216363A (ja) 1985-03-22 1985-03-22 伝導度変調型半導体装置

Country Status (1)

Country Link
JP (1) JPS61216363A (cs)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07123166B2 (ja) * 1986-11-17 1995-12-25 日産自動車株式会社 電導度変調形ｍｏｓｆｅｔ
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
JPS6445173A (en) * 1987-08-13 1989-02-17 Fuji Electric Co Ltd Conductive modulation type mosfet
JPS6490561A (en) * 1987-09-30 1989-04-07 Mitsubishi Electric Corp Semiconductor device
JP2526653B2 (ja) * 1989-01-25 1996-08-21 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
EP0450082B1 (en) * 1989-08-31 2004-04-28 Denso Corporation Insulated gate bipolar transistor
JPH04291767A (ja) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JPH05347413A (ja) * 1992-06-12 1993-12-27 Toshiba Corp 半導体装置の製造方法
JP3081739B2 (ja) * 1992-10-20 2000-08-28 三菱電機株式会社 絶縁ゲート型半導体装置及びその製造方法
US5981981A (en) * 1993-10-13 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a bipolar structure
EP0665597A1 (en) * 1994-01-27 1995-08-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe IGBT and manufacturing process therefore
WO2017130416A1 (ja) * 2016-01-29 2017-08-03 サンケン電気株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE53895B1 (en) * 1981-11-23 1989-04-12 Gen Electric Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device

Also Published As

Publication number Publication date
JPS61216363A (ja) 1986-09-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term