JPH0578193B2 - - Google Patents

Info

Publication number
JPH0578193B2
JPH0578193B2 JP57052770A JP5277082A JPH0578193B2 JP H0578193 B2 JPH0578193 B2 JP H0578193B2 JP 57052770 A JP57052770 A JP 57052770A JP 5277082 A JP5277082 A JP 5277082A JP H0578193 B2 JPH0578193 B2 JP H0578193B2
Authority
JP
Japan
Prior art keywords
film
substrate
sio
silicon
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57052770A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58169976A (ja
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57052770A priority Critical patent/JPS58169976A/ja
Publication of JPS58169976A publication Critical patent/JPS58169976A/ja
Publication of JPH0578193B2 publication Critical patent/JPH0578193B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
JP57052770A 1982-03-30 1982-03-30 半導体装置の製造方法 Granted JPS58169976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57052770A JPS58169976A (ja) 1982-03-30 1982-03-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57052770A JPS58169976A (ja) 1982-03-30 1982-03-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58169976A JPS58169976A (ja) 1983-10-06
JPH0578193B2 true JPH0578193B2 (enrdf_load_stackoverflow) 1993-10-28

Family

ID=12924094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57052770A Granted JPS58169976A (ja) 1982-03-30 1982-03-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58169976A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625641A (ja) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 低温プラズマ窒化方法及びその際に形成される窒化膜の適用
CN102487050B (zh) * 2010-12-03 2015-11-25 比亚迪股份有限公司 功率半导体器件及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676536A (en) * 1979-11-27 1981-06-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Anodization of silicon nitride film
JPS56135937A (en) * 1980-03-28 1981-10-23 Nec Corp Manufacture of semiconductor device
JPS56135936A (en) * 1980-03-28 1981-10-23 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58169976A (ja) 1983-10-06

Similar Documents

Publication Publication Date Title
US4363868A (en) Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process
JPS61137367A (ja) 半導体集積回路装置の製造方法
JPH07273063A (ja) 半導体装置およびその製造方法
JP2932552B2 (ja) 半導体装置及びその製造方法
JP3414590B2 (ja) 半導体装置の製造方法
JP2002359371A (ja) 半導体装置とその製造方法
JP3039978B2 (ja) 集積ｍｉｓｆｅｔデバイス中に電界分離構造及びゲート構造を形成する方法
JP3247242B2 (ja) 半導体装置の製造方法
JPH0578193B2 (enrdf_load_stackoverflow)
US20040007756A1 (en) Semiconductor device and fabrication method therefor
JPH06163523A (ja) 半導体装置の製造方法
US5977608A (en) Modified poly-buffered isolation
US5877073A (en) Modified poly-buffered locos forming technology avoiding the positive charge trapping at the beak of field oxide
JPH09260372A (ja) 半導体装置の絶縁膜の形成方法
JP2003229577A (ja) 半導体装置の製造方法。
JP3376305B2 (ja) 半導体装置の製造方法
JPH11145425A (ja) 半導体素子の製造方法及び半導体装置
JPH0799178A (ja) 半導体装置の製造方法
JPH0379864B2 (enrdf_load_stackoverflow)
JPH1197439A (ja) 半導体装置及びその製造方法
JP2685448B2 (ja) 半導体装置の製造方法
JP2002176053A (ja) 半導体装置の製造方法
KR100235676B1 (ko) 반도체 캐패시터 제조방법
JPH0810681B2 (ja) 半導体装置の製造方法
JPH0216019B2 (enrdf_load_stackoverflow)