JPH0577301B2 - - Google Patents
Info
- Publication number
- JPH0577301B2 JPH0577301B2 JP61220700A JP22070086A JPH0577301B2 JP H0577301 B2 JPH0577301 B2 JP H0577301B2 JP 61220700 A JP61220700 A JP 61220700A JP 22070086 A JP22070086 A JP 22070086A JP H0577301 B2 JPH0577301 B2 JP H0577301B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- forming
- conductivity type
- diffusion layer
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61220700A JPS6376360A (ja) | 1986-09-18 | 1986-09-18 | 半導体集積回路の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61220700A JPS6376360A (ja) | 1986-09-18 | 1986-09-18 | 半導体集積回路の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6376360A JPS6376360A (ja) | 1988-04-06 |
JPH0577301B2 true JPH0577301B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-26 |
Family
ID=16755120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61220700A Granted JPS6376360A (ja) | 1986-09-18 | 1986-09-18 | 半導体集積回路の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6376360A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5350686A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Production of semiconductor integrated circuit |
JPS59979B2 (ja) * | 1976-12-29 | 1984-01-10 | 富士通株式会社 | 半導体集積回路 |
-
1986
- 1986-09-18 JP JP61220700A patent/JPS6376360A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6376360A (ja) | 1988-04-06 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |