JPH0573335B2 - - Google Patents

Info

Publication number
JPH0573335B2
JPH0573335B2 JP63171862A JP17186288A JPH0573335B2 JP H0573335 B2 JPH0573335 B2 JP H0573335B2 JP 63171862 A JP63171862 A JP 63171862A JP 17186288 A JP17186288 A JP 17186288A JP H0573335 B2 JPH0573335 B2 JP H0573335B2
Authority
JP
Japan
Prior art keywords
growth
compound semiconductor
substrate
temperature
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63171862A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0222812A (ja
Inventor
Sachiko Onozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17186288A priority Critical patent/JPH0222812A/ja
Publication of JPH0222812A publication Critical patent/JPH0222812A/ja
Publication of JPH0573335B2 publication Critical patent/JPH0573335B2/ja
Granted legal-status Critical Current

Links

JP17186288A 1988-07-12 1988-07-12 化合物半導体層の成長方法 Granted JPH0222812A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17186288A JPH0222812A (ja) 1988-07-12 1988-07-12 化合物半導体層の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17186288A JPH0222812A (ja) 1988-07-12 1988-07-12 化合物半導体層の成長方法

Publications (2)

Publication Number Publication Date
JPH0222812A JPH0222812A (ja) 1990-01-25
JPH0573335B2 true JPH0573335B2 (enrdf_load_stackoverflow) 1993-10-14

Family

ID=15931165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17186288A Granted JPH0222812A (ja) 1988-07-12 1988-07-12 化合物半導体層の成長方法

Country Status (1)

Country Link
JP (1) JPH0222812A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI258876B (en) * 2004-03-29 2006-07-21 Showa Denko Kk Compound semiconductor light-emitting device and production method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119280A (ja) * 1986-11-06 1988-05-23 Matsushita Electric Ind Co Ltd 青色発光ダイオ−ド

Also Published As

Publication number Publication date
JPH0222812A (ja) 1990-01-25

Similar Documents

Publication Publication Date Title
US5760426A (en) Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13
JPH01289108A (ja) ヘテロエピタキシャル成長方法
US4835116A (en) Annealing method for III-V deposition
JPH0236059B2 (ja) Kagobutsuhandotainoseichohoho
JPH0573335B2 (enrdf_load_stackoverflow)
JPH0236060B2 (ja) Kagobutsuhandotainoseichohoho
JP2845464B2 (ja) 化合物半導体の成長方法
US5183778A (en) Method of producing a semiconductor device
US5296087A (en) Crystal formation method
JP3922674B2 (ja) シリコンウエハの製造方法
JPH0645249A (ja) ＧａＡｓ層の成長方法
JP3078927B2 (ja) 化合物半導体薄膜の成長方法
JPS6012775B2 (ja) 異質基板上への単結晶半導体層形成方法
JPS62219614A (ja) 化合物半導体の成長方法
JP2853226B2 (ja) 半導体装置およびその製造方法
JP2790492B2 (ja) 半導体薄膜の成長方法
JP3541332B2 (ja) 半導体装置の製造方法
JPH0536605A (ja) 化合物半導体基板の製造方法
JP2696928B2 (ja) ヘテロエピタキシャル成長方法
JPH01179788A (ja) Ｓｉ基板上への３−５族化合物半導体結晶の成長方法
JPH05335261A (ja) 単結晶半導体薄膜の形成方法
JPH03270236A (ja) 半導体装置の製造方法
EP0312202A1 (en) Crystal formation method
JPS62291914A (ja) 化合物半導体層の形成方法
JPH0383327A (ja) 化合物半導体基板の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term