JPH0573322B2 - - Google Patents
Info
- Publication number
- JPH0573322B2 JPH0573322B2 JP10277087A JP10277087A JPH0573322B2 JP H0573322 B2 JPH0573322 B2 JP H0573322B2 JP 10277087 A JP10277087 A JP 10277087A JP 10277087 A JP10277087 A JP 10277087A JP H0573322 B2 JPH0573322 B2 JP H0573322B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reactor
- flow rate
- supply means
- organometallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007789 gas Substances 0.000 claims description 47
- 238000001947 vapour-phase growth Methods 0.000 claims description 14
- 238000010926 purge Methods 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 150000002902 organometallic compounds Chemical class 0.000 claims description 11
- 125000002524 organometallic group Chemical group 0.000 claims description 10
- -1 hydrogen compound Chemical class 0.000 claims description 6
- 239000002994 raw material Substances 0.000 description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002483 hydrogen compounds Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10277087A JPS63268244A (ja) | 1987-04-25 | 1987-04-25 | 有機金属気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10277087A JPS63268244A (ja) | 1987-04-25 | 1987-04-25 | 有機金属気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63268244A JPS63268244A (ja) | 1988-11-04 |
| JPH0573322B2 true JPH0573322B2 (enrdf_load_stackoverflow) | 1993-10-14 |
Family
ID=14336400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10277087A Granted JPS63268244A (ja) | 1987-04-25 | 1987-04-25 | 有機金属気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63268244A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60317642T2 (de) * | 2003-06-11 | 2008-10-30 | Asm International N.V. | Gaszufuhrvorrichtung, Ventilanordnung und Verfahren zur Erzeugung von Reaktantpulsen mit einer Ventilanordnung |
| US8728239B2 (en) * | 2011-07-29 | 2014-05-20 | Asm America, Inc. | Methods and apparatus for a gas panel with constant gas flow |
-
1987
- 1987-04-25 JP JP10277087A patent/JPS63268244A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63268244A (ja) | 1988-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |