JPH0572579B2 - - Google Patents

Info

Publication number
JPH0572579B2
JPH0572579B2 JP58152645A JP15264583A JPH0572579B2 JP H0572579 B2 JPH0572579 B2 JP H0572579B2 JP 58152645 A JP58152645 A JP 58152645A JP 15264583 A JP15264583 A JP 15264583A JP H0572579 B2 JPH0572579 B2 JP H0572579B2
Authority
JP
Japan
Prior art keywords
blank mask
resist
mask
frame
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58152645A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6043655A (ja
Inventor
Fumiaki Shigemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58152645A priority Critical patent/JPS6043655A/ja
Publication of JPS6043655A publication Critical patent/JPS6043655A/ja
Publication of JPH0572579B2 publication Critical patent/JPH0572579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP58152645A 1983-08-22 1983-08-22 レジストパタ−ンの形成方法 Granted JPS6043655A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58152645A JPS6043655A (ja) 1983-08-22 1983-08-22 レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58152645A JPS6043655A (ja) 1983-08-22 1983-08-22 レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS6043655A JPS6043655A (ja) 1985-03-08
JPH0572579B2 true JPH0572579B2 (en, 2012) 1993-10-12

Family

ID=15544934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58152645A Granted JPS6043655A (ja) 1983-08-22 1983-08-22 レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS6043655A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3368200B2 (ja) 1998-02-26 2003-01-20 シャープ株式会社 フォトマスク作成方法および熱処理装置
JP5172092B2 (ja) * 2005-12-16 2013-03-27 大日本印刷株式会社 フォトマスクの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552677Y2 (en, 2012) * 1977-11-15 1980-12-06
JPS5863134A (ja) * 1981-10-12 1983-04-14 Hitachi Ltd レジスト硬化方法及びその装置

Also Published As

Publication number Publication date
JPS6043655A (ja) 1985-03-08

Similar Documents

Publication Publication Date Title
JPS6381820A (ja) レジストパタ−ン形成方法
KR100324440B1 (ko) 치수 정밀도가 높은 포토마스크를 형성할 수 있는 포토마스크형성 방법 및 열처리장치
JPH0572579B2 (en, 2012)
JPS6021522A (ja) レジストパタ−ン形成方法
JPH0653106A (ja) 微細レジストパターンの形成方法
JPS63200531A (ja) 半導体装置の製造方法
US4946764A (en) Method of forming resist pattern and resist processing apparatus used in this method
JPS6189632A (ja) レジストパタ−ンの形成方法
JPS62144161A (ja) レジストパタ−ン形成方法
JPH01236627A (ja) レジストパターンの形成方法
JPS61147528A (ja) レジスト処理装置
JPH045258B2 (en, 2012)
JPH02101468A (ja) 微細パターン形成方法
JP2617923B2 (ja) パターン形成方法
JPS61147527A (ja) レジストパタ−ンの形成方法
JPH0480531B2 (en, 2012)
JPS61204933A (ja) 半導体装置の製造方法
JPS59195829A (ja) レジストパタ−ン形成方法及びレジスト処理装置
JP2002343705A (ja) フォトレジスト膜の断面に凹凸形状を形成する方法
JPS60157222A (ja) レジストパタ−ン形成方法及びレジスト処理装置
KR910006041B1 (ko) 포토레지스트의 측벽 프로파일 개선방법
JP2000091217A (ja) レジストパターン形成方法及びリソグラフィシステム
JPS60157225A (ja) レジストパタ−ン形成方法
JPS6042829A (ja) レジストパタ−ンの形成方法
JPS5999436A (ja) マスク製造方法