JPH0568863B2 - - Google Patents
Info
- Publication number
- JPH0568863B2 JPH0568863B2 JP1128810A JP12881089A JPH0568863B2 JP H0568863 B2 JPH0568863 B2 JP H0568863B2 JP 1128810 A JP1128810 A JP 1128810A JP 12881089 A JP12881089 A JP 12881089A JP H0568863 B2 JPH0568863 B2 JP H0568863B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- gate
- layer
- region
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims abstract description 85
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000011229 interlayer Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 abstract description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 70
- 229920002120 photoresistant polymer Polymers 0.000 description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 15
- 239000011574 phosphorus Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- -1 Boron ions Chemical class 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1128810A JPH0296378A (ja) | 1989-05-24 | 1989-05-24 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1128810A JPH0296378A (ja) | 1989-05-24 | 1989-05-24 | 半導体集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2276080A Division JPS56120166A (en) | 1980-02-27 | 1980-02-27 | Semiconductor ic device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0296378A JPH0296378A (ja) | 1990-04-09 |
| JPH0568863B2 true JPH0568863B2 (ko) | 1993-09-29 |
Family
ID=14993980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1128810A Granted JPH0296378A (ja) | 1989-05-24 | 1989-05-24 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0296378A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5691217A (en) * | 1996-01-03 | 1997-11-25 | Micron Technology, Inc. | Semiconductor processing method of forming a pair of field effect transistors having different thickness gate dielectric layers |
| US8050085B2 (en) | 2002-08-29 | 2011-11-01 | Renesas Electronics Corporation | Semiconductor processing device and IC card |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51104276A (ja) * | 1975-03-12 | 1976-09-14 | Hitachi Ltd | Handotaishusekikairo |
| JPS53120383A (en) * | 1977-03-30 | 1978-10-20 | Fujitsu Ltd | Production of semiconductor device |
-
1989
- 1989-05-24 JP JP1128810A patent/JPH0296378A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51104276A (ja) * | 1975-03-12 | 1976-09-14 | Hitachi Ltd | Handotaishusekikairo |
| JPS53120383A (en) * | 1977-03-30 | 1978-10-20 | Fujitsu Ltd | Production of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0296378A (ja) | 1990-04-09 |
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