JPH0568851B2 - - Google Patents

Info

Publication number
JPH0568851B2
JPH0568851B2 JP59020990A JP2099084A JPH0568851B2 JP H0568851 B2 JPH0568851 B2 JP H0568851B2 JP 59020990 A JP59020990 A JP 59020990A JP 2099084 A JP2099084 A JP 2099084A JP H0568851 B2 JPH0568851 B2 JP H0568851B2
Authority
JP
Japan
Prior art keywords
chamber
pressure
oxidation
wafer
loader
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59020990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60165729A (ja
Inventor
Koichi Mase
Masayasu Abe
Masaharu Aoyama
Takashi Yasujima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59020990A priority Critical patent/JPS60165729A/ja
Publication of JPS60165729A publication Critical patent/JPS60165729A/ja
Publication of JPH0568851B2 publication Critical patent/JPH0568851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Formation Of Insulating Films (AREA)
JP59020990A 1984-02-08 1984-02-08 半導体高圧酸化装置 Granted JPS60165729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59020990A JPS60165729A (ja) 1984-02-08 1984-02-08 半導体高圧酸化装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59020990A JPS60165729A (ja) 1984-02-08 1984-02-08 半導体高圧酸化装置

Publications (2)

Publication Number Publication Date
JPS60165729A JPS60165729A (ja) 1985-08-28
JPH0568851B2 true JPH0568851B2 (OSRAM) 1993-09-29

Family

ID=12042567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59020990A Granted JPS60165729A (ja) 1984-02-08 1984-02-08 半導体高圧酸化装置

Country Status (1)

Country Link
JP (1) JPS60165729A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295425A (ja) * 1988-02-29 1989-11-29 Tel Sagami Ltd 酸化装置
JP2688653B2 (ja) * 1988-05-06 1997-12-10 東京エレクトロン株式会社 半導体加圧酸化方法
JP2766856B2 (ja) * 1988-11-11 1998-06-18 東京エレクトロン株式会社 縦型加圧酸化装置
JP3609077B1 (ja) * 2003-07-09 2005-01-12 東京エレクトロン株式会社 高圧熱処理装置

Also Published As

Publication number Publication date
JPS60165729A (ja) 1985-08-28

Similar Documents

Publication Publication Date Title
JP6270952B1 (ja) 基板処理装置、半導体装置の製造方法および記録媒体。
TW379359B (en) Dual vertical thermal processing furnace
TW561518B (en) Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices
EP1069597B1 (en) Apparatus and method for manufacturing semiconductor device
JPH0568851B2 (OSRAM)
JP3404023B2 (ja) ウエハ熱処理装置及びウエハ熱処理方法
KR100248566B1 (ko) 열처리 방법
JP3115164B2 (ja) 熱処理装置
JPH10144659A (ja) 基板の処理装置
JP3449630B2 (ja) 半導体製造装置
JPH0517879Y2 (OSRAM)
JPH0369120A (ja) 高圧酸化炉
JPS6224630A (ja) 熱酸化膜形成方法及びその装置
JP2756502B2 (ja) アッシング処理装置および方法
JPS61208218A (ja) 縦型拡散炉装置
JP2000021797A (ja) 枚葉式熱処理装置
JPH0574757A (ja) 半導体装置用高圧酸化炉
JPH05226455A (ja) 処理装置
JPH06302557A (ja) ドライエッチング装置
JP3340147B2 (ja) 処理装置
JP3081886B2 (ja) 成膜方法
TW200300581A (en) Method for fabricating a semiconductor device and a substrate processing apparatus
JPS6012726A (ja) Ｃｖｄ装置
KR940008371B1 (ko) 반도체기판의 산화 규소막-다결정실리콘막-질화막의 형성방법 및 그 장치
KR100538270B1 (ko) 반도체장치 제조용 확산공정설비

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term