JPH0567049B2 - - Google Patents

Info

Publication number
JPH0567049B2
JPH0567049B2 JP62002776A JP277687A JPH0567049B2 JP H0567049 B2 JPH0567049 B2 JP H0567049B2 JP 62002776 A JP62002776 A JP 62002776A JP 277687 A JP277687 A JP 277687A JP H0567049 B2 JPH0567049 B2 JP H0567049B2
Authority
JP
Japan
Prior art keywords
pattern
resist
forming
period
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62002776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63170917A (ja
Inventor
Takeshi Oofuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62002776A priority Critical patent/JPS63170917A/ja
Publication of JPS63170917A publication Critical patent/JPS63170917A/ja
Publication of JPH0567049B2 publication Critical patent/JPH0567049B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP62002776A 1987-01-09 1987-01-09 微細パタ−ンの形成方法 Granted JPS63170917A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62002776A JPS63170917A (ja) 1987-01-09 1987-01-09 微細パタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62002776A JPS63170917A (ja) 1987-01-09 1987-01-09 微細パタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS63170917A JPS63170917A (ja) 1988-07-14
JPH0567049B2 true JPH0567049B2 (fr) 1993-09-24

Family

ID=11538742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62002776A Granted JPS63170917A (ja) 1987-01-09 1987-01-09 微細パタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS63170917A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2291207B (en) * 1994-07-14 1998-03-25 Hyundai Electronics Ind Method for forming resist patterns
JP4613364B2 (ja) * 2000-06-14 2011-01-19 学校法人東京電機大学 レジストパタン形成方法
JP2002134394A (ja) * 2000-10-25 2002-05-10 Mitsubishi Materials Corp 多重露光方法及び多重露光装置
JP5000250B2 (ja) 2006-09-29 2012-08-15 東京応化工業株式会社 パターン形成方法
JP4987411B2 (ja) * 2006-09-29 2012-07-25 東京応化工業株式会社 パターン形成方法
CN101542390A (zh) * 2006-11-14 2009-09-23 Nxp股份有限公司 用以增大特征空间密度的两次形成图案的光刻技术
JP4927678B2 (ja) * 2007-03-13 2012-05-09 パナソニック株式会社 パターン形成方法
JP4932671B2 (ja) * 2007-10-26 2012-05-16 東京エレクトロン株式会社 エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体
JP2009265505A (ja) * 2008-04-28 2009-11-12 Jsr Corp パターン形成方法及び微細パターン形成用樹脂組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138839A (en) * 1979-04-17 1980-10-30 Nec Kyushu Ltd Method of fabricating semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138839A (en) * 1979-04-17 1980-10-30 Nec Kyushu Ltd Method of fabricating semiconductor device

Also Published As

Publication number Publication date
JPS63170917A (ja) 1988-07-14

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