JPH0565058B2 - - Google Patents

Info

Publication number
JPH0565058B2
JPH0565058B2 JP61133212A JP13321286A JPH0565058B2 JP H0565058 B2 JPH0565058 B2 JP H0565058B2 JP 61133212 A JP61133212 A JP 61133212A JP 13321286 A JP13321286 A JP 13321286A JP H0565058 B2 JPH0565058 B2 JP H0565058B2
Authority
JP
Japan
Prior art keywords
film
silicon
element isolation
oxidation
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61133212A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62290146A (ja
Inventor
Shigeru Morita
Shoichi Kagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61133212A priority Critical patent/JPS62290146A/ja
Priority to US07/015,037 priority patent/US4746625A/en
Priority to KR1019870005761A priority patent/KR960001175B1/ko
Publication of JPS62290146A publication Critical patent/JPS62290146A/ja
Publication of JPH0565058B2 publication Critical patent/JPH0565058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/00—
    • H10W10/01—
    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP61133212A 1986-06-09 1986-06-09 半導体装置の製造方法 Granted JPS62290146A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61133212A JPS62290146A (ja) 1986-06-09 1986-06-09 半導体装置の製造方法
US07/015,037 US4746625A (en) 1986-06-09 1987-02-17 A method of manufacturing semiconductor elements-isolating silicon oxide layers
KR1019870005761A KR960001175B1 (ko) 1986-06-09 1987-06-08 반도체장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61133212A JPS62290146A (ja) 1986-06-09 1986-06-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62290146A JPS62290146A (ja) 1987-12-17
JPH0565058B2 true JPH0565058B2 (enExample) 1993-09-16

Family

ID=15099347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61133212A Granted JPS62290146A (ja) 1986-06-09 1986-06-09 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US4746625A (enExample)
JP (1) JPS62290146A (enExample)
KR (1) KR960001175B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968640A (en) * 1987-02-10 1990-11-06 Industrial Technology Research Institute Isolation structures for integrated circuits
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
US5059550A (en) * 1988-10-25 1991-10-22 Sharp Kabushiki Kaisha Method of forming an element isolating portion in a semiconductor device
JPH02162749A (ja) * 1988-12-15 1990-06-22 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0775243B2 (ja) * 1989-02-22 1995-08-09 株式会社東芝 半導体装置の製造方法
US5002898A (en) * 1989-10-19 1991-03-26 At&T Bell Laboratories Integrated-circuit device isolation
US5057463A (en) * 1990-02-28 1991-10-15 Sgs-Thomson Microelectronics, Inc. Thin oxide structure and method
US5039625A (en) * 1990-04-27 1991-08-13 Mcnc Maximum areal density recessed oxide isolation (MADROX) process
KR930011460B1 (ko) * 1991-01-22 1993-12-08 삼성전자 주식회사 반도체 장치의 소자분리 영역 형성방법
EP1970962B1 (en) * 2001-05-09 2015-01-21 Shindengen Electric Manufacturing Company, Limited Semiconductor device
ITMI20012010A1 (it) * 2001-09-27 2003-03-27 Getters Spa Sistemi per la conversione di acqua in idrogeno e l'assorbimemnto di idrogeno in dispositivi elettronici e processo di produzione
US8941176B2 (en) * 2009-09-29 2015-01-27 Stmicroelectronics S.R.L. Integrated device with raised locos insulation regions and process for manufacturing such device
EP2306509A1 (en) * 2009-09-29 2011-04-06 STMicroelectronics Srl Process for manufacturing an integrated device with "damascene" field insulation, and integrated device made by such process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
JPS57207348A (en) * 1981-06-16 1982-12-20 Fujitsu Ltd Manufacture of semiconductor device
JPS5922344A (ja) * 1982-07-28 1984-02-04 Fujitsu Ltd 半導体装置の製造方法
JPS59227137A (ja) * 1983-06-08 1984-12-20 Nec Corp 半導体基板の製造方法
US4570325A (en) * 1983-12-16 1986-02-18 Kabushiki Kaisha Toshiba Manufacturing a field oxide region for a semiconductor device

Also Published As

Publication number Publication date
KR960001175B1 (ko) 1996-01-19
KR880001048A (ko) 1988-03-31
US4746625A (en) 1988-05-24
JPS62290146A (ja) 1987-12-17

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees