JPH0561783B2 - - Google Patents
Info
- Publication number
- JPH0561783B2 JPH0561783B2 JP62219916A JP21991687A JPH0561783B2 JP H0561783 B2 JPH0561783 B2 JP H0561783B2 JP 62219916 A JP62219916 A JP 62219916A JP 21991687 A JP21991687 A JP 21991687A JP H0561783 B2 JPH0561783 B2 JP H0561783B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- superconducting material
- gate electrode
- layer
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 24
- 239000011224 oxide ceramic Substances 0.000 claims description 14
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 14
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 27
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000002411 adverse Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62219916A JPS6461952A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62219916A JPS6461952A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6461952A JPS6461952A (en) | 1989-03-08 |
| JPH0561783B2 true JPH0561783B2 (fr) | 1993-09-07 |
Family
ID=16743031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62219916A Granted JPS6461952A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461952A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6474758A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Insulated gate field-effect transistor |
| JP2540185B2 (ja) * | 1988-04-14 | 1996-10-02 | 松下電子工業株式会社 | 半導体装置 |
| JP2004503920A (ja) * | 2000-05-31 | 2004-02-05 | モトローラ・インコーポレイテッド | 半導体デバイスおよび該半導体デバイスを製造する方法 |
| JP2002026312A (ja) | 2000-07-06 | 2002-01-25 | National Institute Of Advanced Industrial & Technology | 半導体装置 |
-
1987
- 1987-09-02 JP JP62219916A patent/JPS6461952A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6461952A (en) | 1989-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |