JPH0558263B2 - - Google Patents

Info

Publication number
JPH0558263B2
JPH0558263B2 JP22204183A JP22204183A JPH0558263B2 JP H0558263 B2 JPH0558263 B2 JP H0558263B2 JP 22204183 A JP22204183 A JP 22204183A JP 22204183 A JP22204183 A JP 22204183A JP H0558263 B2 JPH0558263 B2 JP H0558263B2
Authority
JP
Japan
Prior art keywords
film
etching
silicon
polycrystalline silicon
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP22204183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60115255A (ja
Inventor
Kazuo Nakazato
Tooru Nakamura
Yoshifumi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22204183A priority Critical patent/JPS60115255A/ja
Publication of JPS60115255A publication Critical patent/JPS60115255A/ja
Publication of JPH0558263B2 publication Critical patent/JPH0558263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP22204183A 1983-11-28 1983-11-28 半導体装置の製造方法 Granted JPS60115255A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22204183A JPS60115255A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22204183A JPS60115255A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60115255A JPS60115255A (ja) 1985-06-21
JPH0558263B2 true JPH0558263B2 (enrdf_load_stackoverflow) 1993-08-26

Family

ID=16776155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22204183A Granted JPS60115255A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60115255A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620110B2 (ja) * 1985-10-07 1994-03-16 日本電気株式会社 半導体装置
CN102947762B (zh) 2010-04-27 2016-06-08 株式会社理光 粉体收纳容器、粉体输送装置及图像形成装置
JP5420025B2 (ja) 2011-07-14 2014-02-19 キヤノン株式会社 現像剤収納ユニット、プロセスカートリッジ、電子写真画像形成装置

Also Published As

Publication number Publication date
JPS60115255A (ja) 1985-06-21

Similar Documents

Publication Publication Date Title
US4337115A (en) Method of forming electrodes on the surface of a semiconductor substrate
US5382544A (en) Manufacturing method of a semiconductor device utilizing thin metal film
JPH0558263B2 (enrdf_load_stackoverflow)
JPH0313744B2 (enrdf_load_stackoverflow)
JPS6255694B2 (enrdf_load_stackoverflow)
JP2907314B2 (ja) 半導体装置の製造方法
JP2001127039A (ja) 半導体装置の製造方法
JP4568444B2 (ja) 基板上に堆積したポーラスシリカを含有する材料の薄膜のエッチング法
JP2515801B2 (ja) 半導体装置
JPH11330045A (ja) 酸化膜及びシリコン層の積層膜のエッチング方法
JP2535148B2 (ja) コンタクトホ−ルの形成方法
JP2002026020A (ja) 半導体装置の製造方法
JPH10163216A (ja) 半導体装置の製造方法
JPH01117342A (ja) コンタクトホールの形成方法
EP0053484B1 (en) A method for fabricating semiconductor device
JPS6358373B2 (enrdf_load_stackoverflow)
JPH0451050B2 (enrdf_load_stackoverflow)
KR920007067B1 (ko) 층간배선 금속의 제조방법
JPS6060750A (ja) 半導体装置の製造方法
JPS596560A (ja) 半導体装置の製造方法
JPH0734440B2 (ja) 半導体装置における配線形成方法
JPH08124907A (ja) 半導体装置の製造方法
JPS6265426A (ja) 半導体への溝又は穴あけ方法
JPS59115542A (ja) 半導体装置の製造方法
JPS6194326A (ja) 半導体素子の製造方法