JPH0558258B2 - - Google Patents

Info

Publication number
JPH0558258B2
JPH0558258B2 JP59001273A JP127384A JPH0558258B2 JP H0558258 B2 JPH0558258 B2 JP H0558258B2 JP 59001273 A JP59001273 A JP 59001273A JP 127384 A JP127384 A JP 127384A JP H0558258 B2 JPH0558258 B2 JP H0558258B2
Authority
JP
Japan
Prior art keywords
silicon
oxide film
substrate
sio
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59001273A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145638A (ja
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59001273A priority Critical patent/JPS60145638A/ja
Publication of JPS60145638A publication Critical patent/JPS60145638A/ja
Publication of JPH0558258B2 publication Critical patent/JPH0558258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/00—
    • H10W10/01—

Landscapes

  • Element Separation (AREA)
JP59001273A 1984-01-10 1984-01-10 半導体装置の製造方法 Granted JPS60145638A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59001273A JPS60145638A (ja) 1984-01-10 1984-01-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59001273A JPS60145638A (ja) 1984-01-10 1984-01-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60145638A JPS60145638A (ja) 1985-08-01
JPH0558258B2 true JPH0558258B2 (index.php) 1993-08-26

Family

ID=11496849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59001273A Granted JPS60145638A (ja) 1984-01-10 1984-01-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60145638A (index.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393694A (en) * 1994-06-15 1995-02-28 Micron Semiconductor, Inc. Advanced process for recessed poly buffered locos
US5661073A (en) * 1995-08-11 1997-08-26 Micron Technology, Inc. Method for forming field oxide having uniform thickness
JP2005260163A (ja) 2004-03-15 2005-09-22 Fujitsu Ltd 容量素子及びその製造方法並びに半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS60145638A (ja) 1985-08-01

Similar Documents

Publication Publication Date Title
US6489652B1 (en) Trench DMOS device having a high breakdown resistance
KR100227766B1 (ko) 반도체 장치 및 그 제조 방법
US4980306A (en) Method of making a CMOS device with trench isolation device
JPH0513566A (ja) 半導体装置の製造方法
JPH06350090A (ja) 半導体装置の製造方法
US5969393A (en) Semiconductor device and method of manufacture of the same
JPH11145273A (ja) 半導体装置の製造方法
JP3039978B2 (ja) 集積ｍｉｓｆｅｔデバイス中に電界分離構造及びゲート構造を形成する方法
JPH02277253A (ja) 半導体装置の製造方法
JPH0558258B2 (index.php)
US5593928A (en) Method of making a semiconductor device having floating source and drain regions
JP3972486B2 (ja) 半導体装置の製造方法
JP2552152B2 (ja) 半導体装置
JP3001588B2 (ja) 半導体装置およびその製造方法
JPS63305527A (ja) 半導体装置およびその製造方法
JPS5846648A (ja) 半導体装置の製造方法
JPH05226466A (ja) 半導体装置の製造方法
JP2531688B2 (ja) 半導体装置の製造方法
JP2701881B2 (ja) 半導体の分離領域
JP3369692B2 (ja) 半導体素子の製造方法
JPS5846647A (ja) 半導体装置の製造方法
JPH06151842A (ja) 半導体装置及びその製造方法
JPH0387045A (ja) 半導体装置及びその製造方法
JPS60206150A (ja) 半導体装置の製造方法
KR100200747B1 (ko) 반도체장치의 소자분리방법