JPH0557738B2 - - Google Patents

Info

Publication number
JPH0557738B2
JPH0557738B2 JP8425484A JP2548484A JPH0557738B2 JP H0557738 B2 JPH0557738 B2 JP H0557738B2 JP 8425484 A JP8425484 A JP 8425484A JP 2548484 A JP2548484 A JP 2548484A JP H0557738 B2 JPH0557738 B2 JP H0557738B2
Authority
JP
Japan
Prior art keywords
layer
capacitive element
electrode
junction
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8425484A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60169162A (ja
Inventor
Junichi Hikita
Shigeyoshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59025484A priority Critical patent/JPS60169162A/ja
Publication of JPS60169162A publication Critical patent/JPS60169162A/ja
Publication of JPH0557738B2 publication Critical patent/JPH0557738B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP59025484A 1984-02-13 1984-02-13 容量素子 Granted JPS60169162A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59025484A JPS60169162A (ja) 1984-02-13 1984-02-13 容量素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59025484A JPS60169162A (ja) 1984-02-13 1984-02-13 容量素子

Publications (2)

Publication Number Publication Date
JPS60169162A JPS60169162A (ja) 1985-09-02
JPH0557738B2 true JPH0557738B2 (Direct) 1993-08-24

Family

ID=12167325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59025484A Granted JPS60169162A (ja) 1984-02-13 1984-02-13 容量素子

Country Status (1)

Country Link
JP (1) JPS60169162A (Direct)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740038B2 (ja) * 1990-06-18 1998-04-15 株式会社東芝 Ｍｏｓ（ｍｉｓ）型コンデンサー

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524264B2 (Direct) * 1972-02-08 1980-06-27

Also Published As

Publication number Publication date
JPS60169162A (ja) 1985-09-02

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