JPS60169162A - 容量素子 - Google Patents

容量素子

Info

Publication number
JPS60169162A
JPS60169162A JP59025484A JP2548484A JPS60169162A JP S60169162 A JPS60169162 A JP S60169162A JP 59025484 A JP59025484 A JP 59025484A JP 2548484 A JP2548484 A JP 2548484A JP S60169162 A JPS60169162 A JP S60169162A
Authority
JP
Japan
Prior art keywords
layer
capacitive element
electrode
capacitance
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59025484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0557738B2 (Direct
Inventor
Junichi Hikita
純一 疋田
Shigeyoshi Hayashi
林　成嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59025484A priority Critical patent/JPS60169162A/ja
Publication of JPS60169162A publication Critical patent/JPS60169162A/ja
Publication of JPH0557738B2 publication Critical patent/JPH0557738B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP59025484A 1984-02-13 1984-02-13 容量素子 Granted JPS60169162A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59025484A JPS60169162A (ja) 1984-02-13 1984-02-13 容量素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59025484A JPS60169162A (ja) 1984-02-13 1984-02-13 容量素子

Publications (2)

Publication Number Publication Date
JPS60169162A true JPS60169162A (ja) 1985-09-02
JPH0557738B2 JPH0557738B2 (Direct) 1993-08-24

Family

ID=12167325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59025484A Granted JPS60169162A (ja) 1984-02-13 1984-02-13 容量素子

Country Status (1)

Country Link
JP (1) JPS60169162A (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360989A (en) * 1990-06-18 1994-11-01 Kabushiki Kaisha Toshiba MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4883787A (Direct) * 1972-02-08 1973-11-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4883787A (Direct) * 1972-02-08 1973-11-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360989A (en) * 1990-06-18 1994-11-01 Kabushiki Kaisha Toshiba MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions

Also Published As

Publication number Publication date
JPH0557738B2 (Direct) 1993-08-24

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