JPH0449784B2 - - Google Patents

Info

Publication number
JPH0449784B2
JPH0449784B2 JP59027590A JP2759084A JPH0449784B2 JP H0449784 B2 JPH0449784 B2 JP H0449784B2 JP 59027590 A JP59027590 A JP 59027590A JP 2759084 A JP2759084 A JP 2759084A JP H0449784 B2 JPH0449784 B2 JP H0449784B2
Authority
JP
Japan
Prior art keywords
layer
capacitive element
capacitance
electrode
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59027590A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60170964A (ja
Inventor
Junichi Hikita
Shigeyoshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59027590A priority Critical patent/JPS60170964A/ja
Publication of JPS60170964A publication Critical patent/JPS60170964A/ja
Publication of JPH0449784B2 publication Critical patent/JPH0449784B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP59027590A 1984-02-15 1984-02-15 容量素子 Granted JPS60170964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59027590A JPS60170964A (ja) 1984-02-15 1984-02-15 容量素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59027590A JPS60170964A (ja) 1984-02-15 1984-02-15 容量素子

Publications (2)

Publication Number Publication Date
JPS60170964A JPS60170964A (ja) 1985-09-04
JPH0449784B2 true JPH0449784B2 (Direct) 1992-08-12

Family

ID=12225160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59027590A Granted JPS60170964A (ja) 1984-02-15 1984-02-15 容量素子

Country Status (1)

Country Link
JP (1) JPS60170964A (Direct)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292458A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 半導体容量結合素子
JPS6292459A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 半導体容量結合素子
JP2623692B2 (ja) * 1988-01-22 1997-06-25 ソニー株式会社 半導体回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547047B2 (Direct) * 1973-06-28 1979-04-03
US4214252A (en) * 1977-08-06 1980-07-22 U.S. Philips Corporation Semiconductor device having a MOS-capacitor

Also Published As

Publication number Publication date
JPS60170964A (ja) 1985-09-04

Similar Documents

Publication Publication Date Title
US4297654A (en) Crystal oscillator including a MOS-capacitor
JPS6048106B2 (ja) 半導体集積回路
US3999210A (en) FET having a linear impedance characteristic over a wide range of frequency
US3644850A (en) Integrated circuit band pass filter
US4423433A (en) High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
US2662976A (en) Semiconductor amplifier and rectifier
KR0178825B1 (ko) 반도체 장치
JPH0449784B2 (Direct)
US4651178A (en) Dual inverse zener diode with buried junctions
US4649414A (en) PNPN semiconductor switches
JPH0449783B2 (Direct)
JPH0557738B2 (Direct)
US5936454A (en) Lateral bipolar transistor operating with independent base and gate biasing
US3914622A (en) Latch circuit with noise suppression
NL257364A (Direct)
KR850001643A (ko) 증폭기 회로
US5008738A (en) Semiconductor variable capacitance element
JPH0453104B2 (Direct)
JPH0362310B2 (Direct)
JPS6328500B2 (Direct)
JPH05199040A (ja) 半導体装置
JPH0453103B2 (Direct)
JPS5812345A (ja) 定電圧装置
JP2690201B2 (ja) 半導体集積回路
JPS6342423B2 (Direct)