JPH0449783B2 - - Google Patents

Info

Publication number
JPH0449783B2
JPH0449783B2 JP59025483A JP2548384A JPH0449783B2 JP H0449783 B2 JPH0449783 B2 JP H0449783B2 JP 59025483 A JP59025483 A JP 59025483A JP 2548384 A JP2548384 A JP 2548384A JP H0449783 B2 JPH0449783 B2 JP H0449783B2
Authority
JP
Japan
Prior art keywords
layer
capacitive element
capacitance
resistance
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59025483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60169161A (ja
Inventor
Junichi Hikita
Shigeyoshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59025483A priority Critical patent/JPS60169161A/ja
Publication of JPS60169161A publication Critical patent/JPS60169161A/ja
Publication of JPH0449783B2 publication Critical patent/JPH0449783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP59025483A 1984-02-13 1984-02-13 容量素子 Granted JPS60169161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59025483A JPS60169161A (ja) 1984-02-13 1984-02-13 容量素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59025483A JPS60169161A (ja) 1984-02-13 1984-02-13 容量素子

Publications (2)

Publication Number Publication Date
JPS60169161A JPS60169161A (ja) 1985-09-02
JPH0449783B2 true JPH0449783B2 (Direct) 1992-08-12

Family

ID=12167296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59025483A Granted JPS60169161A (ja) 1984-02-13 1984-02-13 容量素子

Country Status (1)

Country Link
JP (1) JPS60169161A (Direct)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS60169161A (ja) 1985-09-02

Similar Documents

Publication Publication Date Title
US4314268A (en) Integrated circuit with shielded lead patterns
US4297654A (en) Crystal oscillator including a MOS-capacitor
US6051868A (en) Semiconductor device
US3999210A (en) FET having a linear impedance characteristic over a wide range of frequency
US4423433A (en) High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
GB1439351A (en) Capacitor
JPS596514B2 (ja) Ｐｎ接合分離法による低漏話モノリシツクｐｎｐｎスイツチマトリクス
US4309626A (en) Diffused resistor
JP3217560B2 (ja) 半導体装置
US5055905A (en) Semiconductor device
US4649414A (en) PNPN semiconductor switches
JPH0449784B2 (Direct)
JPH0449783B2 (Direct)
KR20000076965A (ko) 반도체 장치
US5936454A (en) Lateral bipolar transistor operating with independent base and gate biasing
JPH0453104B2 (Direct)
JPH0557738B2 (Direct)
KR850001643A (ko) 증폭기 회로
JPH0312784B2 (Direct)
JPH0453103B2 (Direct)
US5008738A (en) Semiconductor variable capacitance element
EP0799500A1 (en) Semiconductor resistor device
JPS6328500B2 (Direct)
JP2690201B2 (ja) 半導体集積回路
JPS6331941B2 (Direct)