JPS60169161A - 容量素子 - Google Patents

容量素子

Info

Publication number
JPS60169161A
JPS60169161A JP59025483A JP2548384A JPS60169161A JP S60169161 A JPS60169161 A JP S60169161A JP 59025483 A JP59025483 A JP 59025483A JP 2548384 A JP2548384 A JP 2548384A JP S60169161 A JPS60169161 A JP S60169161A
Authority
JP
Japan
Prior art keywords
layer
resistance
capacitive element
capacitance
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59025483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449783B2 (Direct
Inventor
Junichi Hikita
純一 疋田
Shigeyoshi Hayashi
林 成嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59025483A priority Critical patent/JPS60169161A/ja
Publication of JPS60169161A publication Critical patent/JPS60169161A/ja
Publication of JPH0449783B2 publication Critical patent/JPH0449783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP59025483A 1984-02-13 1984-02-13 容量素子 Granted JPS60169161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59025483A JPS60169161A (ja) 1984-02-13 1984-02-13 容量素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59025483A JPS60169161A (ja) 1984-02-13 1984-02-13 容量素子

Publications (2)

Publication Number Publication Date
JPS60169161A true JPS60169161A (ja) 1985-09-02
JPH0449783B2 JPH0449783B2 (Direct) 1992-08-12

Family

ID=12167296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59025483A Granted JPS60169161A (ja) 1984-02-13 1984-02-13 容量素子

Country Status (1)

Country Link
JP (1) JPS60169161A (Direct)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565453A (en) * 1978-11-10 1980-05-16 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0449783B2 (Direct) 1992-08-12

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