JPH0557731B2 - - Google Patents

Info

Publication number
JPH0557731B2
JPH0557731B2 JP58072557A JP7255783A JPH0557731B2 JP H0557731 B2 JPH0557731 B2 JP H0557731B2 JP 58072557 A JP58072557 A JP 58072557A JP 7255783 A JP7255783 A JP 7255783A JP H0557731 B2 JPH0557731 B2 JP H0557731B2
Authority
JP
Japan
Prior art keywords
film
substrate
photo
light
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58072557A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59198718A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58072557A priority Critical patent/JPS59198718A/ja
Publication of JPS59198718A publication Critical patent/JPS59198718A/ja
Publication of JPH0557731B2 publication Critical patent/JPH0557731B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58072557A 1983-04-25 1983-04-25 気相法による被膜作製方法 Granted JPS59198718A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58072557A JPS59198718A (ja) 1983-04-25 1983-04-25 気相法による被膜作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58072557A JPS59198718A (ja) 1983-04-25 1983-04-25 気相法による被膜作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29547189A Division JPH0660405B2 (ja) 1989-11-13 1989-11-13 気相法による被膜作製方法

Publications (2)

Publication Number Publication Date
JPS59198718A JPS59198718A (ja) 1984-11-10
JPH0557731B2 true JPH0557731B2 (en:Method) 1993-08-24

Family

ID=13492770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58072557A Granted JPS59198718A (ja) 1983-04-25 1983-04-25 気相法による被膜作製方法

Country Status (1)

Country Link
JP (1) JPS59198718A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727038U (ja) * 1993-10-25 1995-05-19 大同ほくさん株式会社 浴室用電気機器のエアスイッチ機構

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
JPS61152024A (ja) * 1984-12-25 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61152026A (ja) * 1984-12-25 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61159772A (ja) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPH06105688B2 (ja) * 1985-07-15 1994-12-21 三井東圧化学株式会社 半導体薄膜の製造方法
JPH06105689B2 (ja) * 1985-07-24 1994-12-21 三井東圧化学株式会社 半導体薄膜の製膜方法
JPS62224923A (ja) * 1986-03-27 1987-10-02 Anelva Corp 半導体薄膜の作製方法及び装置
JPS63155682A (ja) * 1986-12-18 1988-06-28 Sanyo Electric Co Ltd 光起電力装置
DE3790981T1 (de) * 1987-07-07 1989-07-06 Mobil Solar Energy Corp Verfahren zum herstellen von solarzellen mit einer antireflektions-beschichtung
AU636818B2 (en) * 1988-12-27 1993-05-06 Symetrix Corporation Methods and apparatus for material deposition
US5962085A (en) * 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
JPH08321496A (ja) * 1996-05-07 1996-12-03 Semiconductor Energy Lab Co Ltd 被膜作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPAN.J.APPL.PHYS=1983 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727038U (ja) * 1993-10-25 1995-05-19 大同ほくさん株式会社 浴室用電気機器のエアスイッチ機構

Also Published As

Publication number Publication date
JPS59198718A (ja) 1984-11-10

Similar Documents

Publication Publication Date Title
US4968384A (en) Method of producing carbon-doped amorphous silicon thin film
JPH0557731B2 (en:Method)
JPH049369B2 (en:Method)
US4755483A (en) Method for producing semiconductor device with p-type amorphous silicon carbide semiconductor film formed by photo-chemical vapor deposition
JPS59188913A (ja) 光ｃｖｄ装置
JPS60117712A (ja) 薄膜形成方法
JP2588446B2 (ja) 半導体装置
JPH07221026A (ja) 高品質半導体薄膜の形成方法
JPH0463536B2 (en:Method)
JPH0660405B2 (ja) 気相法による被膜作製方法
JP2654456B2 (ja) 高品質ｉｇｆｅｔの作製方法
JP3040247B2 (ja) シリコン薄膜の製造法
JPH0573830B2 (en:Method)
JPS63317675A (ja) プラズマ気相成長装置
JPS63258016A (ja) 非晶質薄膜の作製方法
JPH04299522A (ja) 非単結晶シリコンの製造法及び装置
JPH04299524A (ja) 非単結晶シリコンの製造法及び装置
JPH0298127A (ja) 半導体薄膜の形成方法
JPH0670970B2 (ja) 堆積膜形成方法
JPH0682616B2 (ja) 堆積膜形成方法
JPH04299521A (ja) 非単結晶シリコンの製造法及び装置
JPH04299523A (ja) 非単結晶シリコンの製造法及び装置
JP2659401B2 (ja) 炭素含有シリコン薄膜の形成方法
JPH04367222A (ja) 非単結晶シリコン膜の成膜方法及びその装置
JPH06326043A (ja) 非晶質シリコン膜およびその製造方法