JPS59198718A - 気相法による被膜作製方法 - Google Patents

気相法による被膜作製方法

Info

Publication number
JPS59198718A
JPS59198718A JP58072557A JP7255783A JPS59198718A JP S59198718 A JPS59198718 A JP S59198718A JP 58072557 A JP58072557 A JP 58072557A JP 7255783 A JP7255783 A JP 7255783A JP S59198718 A JPS59198718 A JP S59198718A
Authority
JP
Japan
Prior art keywords
film
substrate
photo
reaction
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58072557A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0557731B2 (en:Method
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58072557A priority Critical patent/JPS59198718A/ja
Publication of JPS59198718A publication Critical patent/JPS59198718A/ja
Publication of JPH0557731B2 publication Critical patent/JPH0557731B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58072557A 1983-04-25 1983-04-25 気相法による被膜作製方法 Granted JPS59198718A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58072557A JPS59198718A (ja) 1983-04-25 1983-04-25 気相法による被膜作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58072557A JPS59198718A (ja) 1983-04-25 1983-04-25 気相法による被膜作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29547189A Division JPH0660405B2 (ja) 1989-11-13 1989-11-13 気相法による被膜作製方法

Publications (2)

Publication Number Publication Date
JPS59198718A true JPS59198718A (ja) 1984-11-10
JPH0557731B2 JPH0557731B2 (en:Method) 1993-08-24

Family

ID=13492770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58072557A Granted JPS59198718A (ja) 1983-04-25 1983-04-25 気相法による被膜作製方法

Country Status (1)

Country Link
JP (1) JPS59198718A (en:Method)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127121A (ja) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd 薄膜形成方法
JPS61152024A (ja) * 1984-12-25 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61152026A (ja) * 1984-12-25 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61159772A (ja) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS6216511A (ja) * 1985-07-15 1987-01-24 Mitsui Toatsu Chem Inc 半導体薄膜の製造方法
JPS6223105A (ja) * 1985-07-24 1987-01-31 Mitsui Toatsu Chem Inc 半導体薄膜の製膜方法
JPS62224923A (ja) * 1986-03-27 1987-10-02 Anelva Corp 半導体薄膜の作製方法及び装置
JPS63155682A (ja) * 1986-12-18 1988-06-28 Sanyo Electric Co Ltd 光起電力装置
JPH02500397A (ja) * 1987-07-07 1990-02-08 モービル・ソラー・エナージー・コーポレーション 反射防止被膜を有する太陽電池の製造方法
WO1990007390A1 (en) * 1988-12-27 1990-07-12 Symetrix Corporation Methods and apparatus for material deposition
JPH08321496A (ja) * 1996-05-07 1996-12-03 Semiconductor Energy Lab Co Ltd 被膜作製方法
US5962085A (en) * 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727038U (ja) * 1993-10-25 1995-05-19 大同ほくさん株式会社 浴室用電気機器のエアスイッチ機構

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPAN.J.APPL.PHYS=1983 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984595B1 (en) 1984-11-26 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Layer member forming method
JPS61127121A (ja) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd 薄膜形成方法
JPS61152024A (ja) * 1984-12-25 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61152026A (ja) * 1984-12-25 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61159772A (ja) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS6216511A (ja) * 1985-07-15 1987-01-24 Mitsui Toatsu Chem Inc 半導体薄膜の製造方法
JPS6223105A (ja) * 1985-07-24 1987-01-31 Mitsui Toatsu Chem Inc 半導体薄膜の製膜方法
JPS62224923A (ja) * 1986-03-27 1987-10-02 Anelva Corp 半導体薄膜の作製方法及び装置
JPS63155682A (ja) * 1986-12-18 1988-06-28 Sanyo Electric Co Ltd 光起電力装置
JPH02500397A (ja) * 1987-07-07 1990-02-08 モービル・ソラー・エナージー・コーポレーション 反射防止被膜を有する太陽電池の製造方法
WO1990007390A1 (en) * 1988-12-27 1990-07-12 Symetrix Corporation Methods and apparatus for material deposition
US5962085A (en) * 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
JPH08321496A (ja) * 1996-05-07 1996-12-03 Semiconductor Energy Lab Co Ltd 被膜作製方法

Also Published As

Publication number Publication date
JPH0557731B2 (en:Method) 1993-08-24

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