JPH0556660B2 - - Google Patents

Info

Publication number
JPH0556660B2
JPH0556660B2 JP59195631A JP19563184A JPH0556660B2 JP H0556660 B2 JPH0556660 B2 JP H0556660B2 JP 59195631 A JP59195631 A JP 59195631A JP 19563184 A JP19563184 A JP 19563184A JP H0556660 B2 JPH0556660 B2 JP H0556660B2
Authority
JP
Japan
Prior art keywords
collector
transistor
tab
junction
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59195631A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60124861A (ja
Inventor
Emu Suteitsuto Robaato
Tei Baato Rodonii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Tucson Corp
Original Assignee
Burr Brown Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burr Brown Corp filed Critical Burr Brown Corp
Publication of JPS60124861A publication Critical patent/JPS60124861A/ja
Publication of JPH0556660B2 publication Critical patent/JPH0556660B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP59195631A 1983-12-05 1984-09-18 Ｐｎ接合絶縁集積回路 Granted JPS60124861A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55782683A 1983-12-05 1983-12-05
US557826 1983-12-05

Publications (2)

Publication Number Publication Date
JPS60124861A JPS60124861A (ja) 1985-07-03
JPH0556660B2 true JPH0556660B2 (enrdf_load_stackoverflow) 1993-08-20

Family

ID=24227040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59195631A Granted JPS60124861A (ja) 1983-12-05 1984-09-18 Ｐｎ接合絶縁集積回路

Country Status (4)

Country Link
JP (1) JPS60124861A (enrdf_load_stackoverflow)
DE (1) DE3444376A1 (enrdf_load_stackoverflow)
FR (1) FR2556133A1 (enrdf_load_stackoverflow)
GB (1) GB2150779B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
JPS63274169A (ja) * 1987-05-04 1988-11-11 Rohm Co Ltd 半導体装置
JP2642375B2 (ja) * 1988-01-26 1997-08-20 株式会社東芝 半導体集積回路装置
JP2634679B2 (ja) * 1990-03-12 1997-07-30 シャープ株式会社 Ｐｎｐトランジスタ回路
US6552712B1 (en) * 1997-06-11 2003-04-22 Seiko Epson Corporation Semiconductor device, liquid crystal display, and electronic equipment including the same
DE10314151B4 (de) * 2003-03-28 2008-04-24 Infineon Technologies Ag Halbleiterbauelementeanordnung und Verfahren zur Kompensation parasitärer Ströme

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558267A (en) * 1966-08-04 1971-01-26 Du Pont Method for dyeing high-temperature-resistant polyamides and polyimides
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors

Also Published As

Publication number Publication date
GB2150779B (en) 1987-03-04
FR2556133A1 (fr) 1985-06-07
GB8417443D0 (en) 1984-08-15
DE3444376A1 (de) 1985-08-01
GB2150779A (en) 1985-07-03
JPS60124861A (ja) 1985-07-03

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