GB8417443D0 - Leakage current compensation method - Google Patents

Leakage current compensation method

Info

Publication number
GB8417443D0
GB8417443D0 GB848417443A GB8417443A GB8417443D0 GB 8417443 D0 GB8417443 D0 GB 8417443D0 GB 848417443 A GB848417443 A GB 848417443A GB 8417443 A GB8417443 A GB 8417443A GB 8417443 D0 GB8417443 D0 GB 8417443D0
Authority
GB
United Kingdom
Prior art keywords
leakage current
compensation method
current compensation
leakage
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB848417443A
Other versions
GB2150779A (en
GB2150779B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Tucson Corp
Original Assignee
Burr Brown Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burr Brown Corp filed Critical Burr Brown Corp
Publication of GB8417443D0 publication Critical patent/GB8417443D0/en
Publication of GB2150779A publication Critical patent/GB2150779A/en
Application granted granted Critical
Publication of GB2150779B publication Critical patent/GB2150779B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
GB08417443A 1983-12-05 1984-07-09 Leakage current compensation method and structure for integrated circuits Expired GB2150779B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55782683A 1983-12-05 1983-12-05

Publications (3)

Publication Number Publication Date
GB8417443D0 true GB8417443D0 (en) 1984-08-15
GB2150779A GB2150779A (en) 1985-07-03
GB2150779B GB2150779B (en) 1987-03-04

Family

ID=24227040

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08417443A Expired GB2150779B (en) 1983-12-05 1984-07-09 Leakage current compensation method and structure for integrated circuits

Country Status (4)

Country Link
JP (1) JPS60124861A (en)
DE (1) DE3444376A1 (en)
FR (1) FR2556133A1 (en)
GB (1) GB2150779B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3615049C2 (en) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrated resistor arrangement with protective element against reverse polarity and overvoltage or undervoltage
JPS63274169A (en) * 1987-05-04 1988-11-11 Rohm Co Ltd Semiconductor device
JP2642375B2 (en) * 1988-01-26 1997-08-20 株式会社東芝 Semiconductor integrated circuit device
JP2634679B2 (en) * 1990-03-12 1997-07-30 シャープ株式会社 PNP transistor circuit
KR100558420B1 (en) * 1997-06-11 2006-03-07 세이코 엡슨 가부시키가이샤 Semiconductor device, liquid crystal display, and electronic apparatus including the same
DE10314151B4 (en) * 2003-03-28 2008-04-24 Infineon Technologies Ag Semiconductor device arrangement and method for compensation of parasitic currents

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558267A (en) * 1966-08-04 1971-01-26 Du Pont Method for dyeing high-temperature-resistant polyamides and polyimides
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors

Also Published As

Publication number Publication date
DE3444376A1 (en) 1985-08-01
JPS60124861A (en) 1985-07-03
GB2150779A (en) 1985-07-03
JPH0556660B2 (en) 1993-08-20
FR2556133A1 (en) 1985-06-07
GB2150779B (en) 1987-03-04

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950709