JPH0556652B2 - - Google Patents

Info

Publication number
JPH0556652B2
JPH0556652B2 JP60241121A JP24112185A JPH0556652B2 JP H0556652 B2 JPH0556652 B2 JP H0556652B2 JP 60241121 A JP60241121 A JP 60241121A JP 24112185 A JP24112185 A JP 24112185A JP H0556652 B2 JPH0556652 B2 JP H0556652B2
Authority
JP
Japan
Prior art keywords
beryllium
strength
germanium
wire
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60241121A
Other languages
English (en)
Other versions
JPS62101061A (ja
Inventor
Yasuo Fukui
Taiyo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP60241121A priority Critical patent/JPS62101061A/ja
Priority to US06/863,530 priority patent/US4775512A/en
Priority to KR1019860004266A priority patent/KR930002807B1/ko
Priority to DE19863618560 priority patent/DE3618560A1/de
Priority to GB8613580A priority patent/GB2181157B/en
Publication of JPS62101061A publication Critical patent/JPS62101061A/ja
Publication of JPH0556652B2 publication Critical patent/JPH0556652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01206—6N purity grades, i.e. 99.9999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
（産業上の利用分野） 本願は半導体のチツプ電極と外部リード部とを
接続するために使用する半導体素子のボンデイン
グ用金線の発明に関するものである。 （従来の技術とその問題点） 従来、TCボンデイング法に使用される金線と
して純度が99.995wt％以上の金に0.0003〜
0.0030wt％のゲルマニウム（Ge）を添加したも
のがみられるが（特公昭54−24265）、該金線をさ
らに高純度とすることにより不純物元素の影響を
避けて電気抵抗を小さくすることが可能である。 ところが、上記金線の純度をさらに高くする
と、前記ゲルマニウムの添加量では金線の機械的
強度が弱くなるため、線引加工中に頻繁に断線を
起こし歩留りが悪くなる上にボンデイング時に
種々の弊害が生じることがわかつた。 即ち、上記ゲルマニウムの添加量では、伸びは
大きいが強度が小さく柔らかいためにループ形状
が不安定になり、又、接着強度が小さいことや、
ネツク切れが発生しやすいという問題があつた。 そこで、ゲルマニウムの添加量を増すことが考
えられるが、その添加量が0.0060wt％を越える
と、前記とは逆に伸びが若干小さくかつ強度は大
きくなるが、硬くなりすぎるため第２ボンデイン
グ部における接着強度が小さくなつて接着不良を
起すといつた問題点があり、夫々伸びと強度が相
俟つて満足な機械的強度を達成することが出来な
かつた。 （発明が解決しようとする技術的課題） 以上の問題を解決しようとする本発明の技術的
課題は、Ge及びBeの適合添加量の相乗効果によ
つて高純度金線の引張強度や高温強度等の機械的
強度及びボンデイング後の接着強度を大きくする
と共にネツク切れを起さないボンデイング用金線
を提供することである。 （技術的課題を達成するための技術的手段） 以上の技術的課題を達成するための本発明の技
術的手段は、99.996〜99.99995wt％の高純度金
（Au）に0.0032〜0.0060wt％のゲルマニウム
（Ge）及び0.00001〜0.00009wt％のベリリウム
（Be）を含有せしめることであり、これらゲルマ
ニウム（Ge）とベリリウム（Be）の添加総量
中、該ゲルマニウム（Ge）が0.0032wt％未満で、
ベリリウム（Be）が0.00001wt％未満であると、
両元素の相乗効果が現われないため引張強度や高
温強度等の機械的強度及び接着強度が小さい。 又、ゲルマニウム（Ge）が0.0060wt％を越え、
かつベリリウム（Be）も0.00009wt％を越えると
硬くなつて粒界破断を生じ、使用不能となる。 又、前記金の純度の範囲におけるゲルマニウム
とベリリウムの添加量の総量は、金の純度が高く
なるにつれて多くなり、純度が低くなるにつれて
少なくなるようにするとよい。 更に、前記ゲルマニウムとベリリウムの総量の
うちわけは、ゲルマニウムが少ないとき、例えば
0.0032wt％の場合はベリリウムは0.00009wt％と
し、高い場合、例えば0.0060wt％の場合はベリリ
ウム0.00001wt％とする。そして、その最適値は
ゲルマニウム0.0040wt％に対してベリリウムが
0.00005wt％である。 （発明の効果） 本発明は以上の様な構成にしたことにより下記
の効果を有する。 ゲルマニウム（Ge）とベリリウム（Be）と
の相乗効果により高純度金の引張強度や高温強
度等の機械的強度の向上を図ることができると
共に、接着強度の向上をも図ることができる。 ベリリウム（Be）を添加したことにより、
ネツク切れを防止することができる。 （実施例） 本発明の実施品の試料は99.996wt％、99.999wt
％、99.9999wt％、99.99995wt％の金（Au）にゲ
ルマニウム（Ge）及びベリリウム（Be）を添加
して溶解鋳造し、線引加工と中間処理とをくり返
して直径25μmのAu線に仕上げたものである。 次表（１），（２），（３），（４）は上記各試料の
引張強度や高温強度等の機械的性質、接着強度及
びネツク切れの有無等の測定結果を示したもので
あり、前記各表における試料No.１〜36は本発明の
実施品、No.37，38は比較品を示す。
【表】
【表】
【表】
【表】
【表】
【表】
【表】
【表】
【表】 この結果、99.996〜99.99995wt％の高純度金
（Au）に0.0032〜0.0060wt％のゲルマニウム
（Ge）及び0.00001〜0.00009wt％のベリリウム
（Be）を含有せしめることにより前記効果を確認
することができた。

Claims (1)

    【特許請求の範囲】
  1. １ 99.996〜99.99995wt％の高純度金（Au）に
    0.0032〜0.0060wt％のゲルマニウム（Ge）及び
    0.00001〜0.00009wt％のベリリウム（Be）を含有
    せしめたことを特徴とする半導体素子のボンデイ
    ング用金線。
JP60241121A 1985-10-01 1985-10-26 半導体素子のボンデイング用金線 Granted JPS62101061A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60241121A JPS62101061A (ja) 1985-10-26 1985-10-26 半導体素子のボンデイング用金線
US06/863,530 US4775512A (en) 1985-10-01 1986-05-15 Gold line for bonding semiconductor element
KR1019860004266A KR930002807B1 (ko) 1985-10-26 1986-05-30 반도체 소자의 본딩(Bonding)용 금선(金線)
DE19863618560 DE3618560A1 (de) 1985-10-01 1986-06-03 Goldleitung zum verbinden von halbleiterelementen
GB8613580A GB2181157B (en) 1985-10-01 1986-06-04 Gold line for bonding semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60241121A JPS62101061A (ja) 1985-10-26 1985-10-26 半導体素子のボンデイング用金線

Publications (2)

Publication Number Publication Date
JPS62101061A JPS62101061A (ja) 1987-05-11
JPH0556652B2 true JPH0556652B2 (ja) 1993-08-20

Family

ID=17069595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60241121A Granted JPS62101061A (ja) 1985-10-01 1985-10-26 半導体素子のボンデイング用金線

Country Status (2)

Country Link
JP (1) JPS62101061A (ja)
KR (1) KR930002807B1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0686637B2 (ja) * 1987-11-09 1994-11-02 三菱マテリアル株式会社 ループ成形性の優れた半導体素子ボンディング用Ａｕ合金細線

Also Published As

Publication number Publication date
KR870004508A (ko) 1987-05-11
KR930002807B1 (ko) 1993-04-10
JPS62101061A (ja) 1987-05-11

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