JPH0556648B2 - - Google Patents

Info

Publication number
JPH0556648B2
JPH0556648B2 JP59241092A JP24109284A JPH0556648B2 JP H0556648 B2 JPH0556648 B2 JP H0556648B2 JP 59241092 A JP59241092 A JP 59241092A JP 24109284 A JP24109284 A JP 24109284A JP H0556648 B2 JPH0556648 B2 JP H0556648B2
Authority
JP
Japan
Prior art keywords
film
substrate electrode
bias voltage
glow discharge
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59241092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61119030A (ja
Inventor
Tomohiko Nakanishi
Tadashi Hatsutori
Shinya Mizuki
Kenji Maekawa
Tetsuya Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Soken Inc
Original Assignee
Nippon Soken Inc
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Soken Inc, NipponDenso Co Ltd filed Critical Nippon Soken Inc
Priority to JP59241092A priority Critical patent/JPS61119030A/ja
Publication of JPS61119030A publication Critical patent/JPS61119030A/ja
Publication of JPH0556648B2 publication Critical patent/JPH0556648B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Photovoltaic Devices (AREA)
JP59241092A 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法 Granted JPS61119030A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59241092A JPS61119030A (ja) 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59241092A JPS61119030A (ja) 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS61119030A JPS61119030A (ja) 1986-06-06
JPH0556648B2 true JPH0556648B2 (enExample) 1993-08-20

Family

ID=17069165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59241092A Granted JPS61119030A (ja) 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS61119030A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119520A (ja) * 1986-11-07 1988-05-24 Agency Of Ind Science & Technol 非晶質シリコン合金堆積法及び装置
JPH02276241A (ja) * 1989-04-18 1990-11-13 Mitsui Toatsu Chem Inc 半導体薄膜の形成方法
JPH02276240A (ja) * 1989-04-18 1990-11-13 Mitsui Toatsu Chem Inc 非晶質半導体薄膜の形成方法
JP2008115460A (ja) 2006-10-12 2008-05-22 Canon Inc 半導体素子の形成方法及び光起電力素子の形成方法

Also Published As

Publication number Publication date
JPS61119030A (ja) 1986-06-06

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