JPS61119030A - 水素化アモルフアス半導体薄膜の製造方法 - Google Patents
水素化アモルフアス半導体薄膜の製造方法Info
- Publication number
- JPS61119030A JPS61119030A JP59241092A JP24109284A JPS61119030A JP S61119030 A JPS61119030 A JP S61119030A JP 59241092 A JP59241092 A JP 59241092A JP 24109284 A JP24109284 A JP 24109284A JP S61119030 A JPS61119030 A JP S61119030A
- Authority
- JP
- Japan
- Prior art keywords
- substrate electrode
- plasma
- film
- thin film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 30
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 11
- 238000007599 discharging Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59241092A JPS61119030A (ja) | 1984-11-14 | 1984-11-14 | 水素化アモルフアス半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59241092A JPS61119030A (ja) | 1984-11-14 | 1984-11-14 | 水素化アモルフアス半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119030A true JPS61119030A (ja) | 1986-06-06 |
| JPH0556648B2 JPH0556648B2 (enExample) | 1993-08-20 |
Family
ID=17069165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59241092A Granted JPS61119030A (ja) | 1984-11-14 | 1984-11-14 | 水素化アモルフアス半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119030A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119520A (ja) * | 1986-11-07 | 1988-05-24 | Agency Of Ind Science & Technol | 非晶質シリコン合金堆積法及び装置 |
| JPH02276241A (ja) * | 1989-04-18 | 1990-11-13 | Mitsui Toatsu Chem Inc | 半導体薄膜の形成方法 |
| JPH02276240A (ja) * | 1989-04-18 | 1990-11-13 | Mitsui Toatsu Chem Inc | 非晶質半導体薄膜の形成方法 |
| US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
-
1984
- 1984-11-14 JP JP59241092A patent/JPS61119030A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119520A (ja) * | 1986-11-07 | 1988-05-24 | Agency Of Ind Science & Technol | 非晶質シリコン合金堆積法及び装置 |
| JPH02276241A (ja) * | 1989-04-18 | 1990-11-13 | Mitsui Toatsu Chem Inc | 半導体薄膜の形成方法 |
| JPH02276240A (ja) * | 1989-04-18 | 1990-11-13 | Mitsui Toatsu Chem Inc | 非晶質半導体薄膜の形成方法 |
| US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556648B2 (enExample) | 1993-08-20 |
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