JPH0553074B2 - - Google Patents
Info
- Publication number
- JPH0553074B2 JPH0553074B2 JP61059278A JP5927886A JPH0553074B2 JP H0553074 B2 JPH0553074 B2 JP H0553074B2 JP 61059278 A JP61059278 A JP 61059278A JP 5927886 A JP5927886 A JP 5927886A JP H0553074 B2 JPH0553074 B2 JP H0553074B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- epitaxial layer
- conductivity type
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/141—VDMOS having built-in components
- H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059278A JPS62217664A (ja) | 1986-03-19 | 1986-03-19 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059278A JPS62217664A (ja) | 1986-03-19 | 1986-03-19 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62217664A JPS62217664A (ja) | 1987-09-25 |
| JPH0553074B2 true JPH0553074B2 (enrdf_load_stackoverflow) | 1993-08-09 |
Family
ID=13108755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61059278A Granted JPS62217664A (ja) | 1986-03-19 | 1986-03-19 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62217664A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192989A (en) * | 1989-11-28 | 1993-03-09 | Nissan Motor Co., Ltd. | Lateral dmos fet device with reduced on resistance |
| US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
| JP5183835B2 (ja) * | 2000-11-02 | 2013-04-17 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP4387865B2 (ja) | 2004-05-14 | 2009-12-24 | パナソニック株式会社 | 半導体装置 |
| JP4150704B2 (ja) * | 2004-07-16 | 2008-09-17 | 新電元工業株式会社 | 横型短チャネルｄｍｏｓ |
| DE102007012380A1 (de) | 2007-03-14 | 2008-09-18 | Austriamicrosystems Ag | MOSFET mit Kanalanschluss und Verfahren zur Herstellung eines MOSFETs mit Kanalanschluss |
-
1986
- 1986-03-19 JP JP61059278A patent/JPS62217664A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62217664A (ja) | 1987-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |