JPH0552662B2 - - Google Patents
Info
- Publication number
- JPH0552662B2 JPH0552662B2 JP59170265A JP17026584A JPH0552662B2 JP H0552662 B2 JPH0552662 B2 JP H0552662B2 JP 59170265 A JP59170265 A JP 59170265A JP 17026584 A JP17026584 A JP 17026584A JP H0552662 B2 JPH0552662 B2 JP H0552662B2
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- forming
- graft
- resist
- polymerizable material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 51
- 239000010408 film Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000000178 monomer Substances 0.000 claims description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 229920006254 polymer film Polymers 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 9
- 238000010559 graft polymerization reaction Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical group Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 claims description 3
- 239000005050 vinyl trichlorosilane Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 239000010410 layer Substances 0.000 description 32
- 230000018109 developmental process Effects 0.000 description 11
- 229920000578 graft copolymer Polymers 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 206010042674 Swelling Diseases 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59170265A JPS6147641A (ja) | 1984-08-15 | 1984-08-15 | レジストパタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59170265A JPS6147641A (ja) | 1984-08-15 | 1984-08-15 | レジストパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6147641A JPS6147641A (ja) | 1986-03-08 |
| JPH0552662B2 true JPH0552662B2 (enrdf_load_stackoverflow) | 1993-08-06 |
Family
ID=15901728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59170265A Granted JPS6147641A (ja) | 1984-08-15 | 1984-08-15 | レジストパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6147641A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006247581A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | パターン形成方法及びそれを用いて得られたパターン材料並びにカラーフィルタ |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58196934A (ja) * | 1982-05-08 | 1983-11-16 | Utsunomiya Daigaku | セラミツクスの精密振動切削法 |
| GB8608114D0 (en) * | 1986-04-03 | 1986-05-08 | Secr Defence | Smectic liquid crystal devices |
| NL8700421A (nl) * | 1987-02-20 | 1988-09-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JP2641452B2 (ja) * | 1987-07-27 | 1997-08-13 | 株式会社日立製作所 | パターン形成方法 |
| JPH01123232A (ja) * | 1987-11-09 | 1989-05-16 | Mitsubishi Electric Corp | パターン形成方法 |
| JP2521329B2 (ja) * | 1988-07-04 | 1996-08-07 | シャープ株式会社 | 半導体装置の製造方法 |
| JP3980351B2 (ja) * | 2001-08-03 | 2007-09-26 | 富士フイルム株式会社 | 導電性パターン材料及び導電性パターンの形成方法 |
| WO2005116763A1 (ja) * | 2004-05-31 | 2005-12-08 | Fujifilm Corporation | グラフトパターン形成方法、グラフトパターン材料、リソグラフィ方法、導電性パターン形成方法、導電性パターン、カラーフィルタの製造方法、カラーフィルタ、及びマイクロレンズの製造方法 |
| KR20080003389A (ko) * | 2005-05-02 | 2008-01-07 | 후지필름 가부시키가이샤 | 그래프트 패턴 형성 방법, 그것에 의해 얻어진 그래프트패턴 재료 및 그것을 이용한 리소그래피 방법 |
-
1984
- 1984-08-15 JP JP59170265A patent/JPS6147641A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006247581A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | パターン形成方法及びそれを用いて得られたパターン材料並びにカラーフィルタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6147641A (ja) | 1986-03-08 |
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