JPH0547992B2 - - Google Patents

Info

Publication number
JPH0547992B2
JPH0547992B2 JP57009689A JP968982A JPH0547992B2 JP H0547992 B2 JPH0547992 B2 JP H0547992B2 JP 57009689 A JP57009689 A JP 57009689A JP 968982 A JP968982 A JP 968982A JP H0547992 B2 JPH0547992 B2 JP H0547992B2
Authority
JP
Japan
Prior art keywords
transistor
electrode
gate
diodes
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57009689A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58127376A (ja
Inventor
Osamu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Co Ltd
Priority to JP57009689A priority Critical patent/JPS58127376A/ja
Publication of JPS58127376A publication Critical patent/JPS58127376A/ja
Publication of JPH0547992B2 publication Critical patent/JPH0547992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
JP57009689A 1982-01-25 1982-01-25 Ｇｔｏサイリスタ Granted JPS58127376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57009689A JPS58127376A (ja) 1982-01-25 1982-01-25 Ｇｔｏサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57009689A JPS58127376A (ja) 1982-01-25 1982-01-25 Ｇｔｏサイリスタ

Publications (2)

Publication Number Publication Date
JPS58127376A JPS58127376A (ja) 1983-07-29
JPH0547992B2 true JPH0547992B2 (cs) 1993-07-20

Family

ID=11727179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009689A Granted JPS58127376A (ja) 1982-01-25 1982-01-25 Ｇｔｏサイリスタ

Country Status (1)

Country Link
JP (1) JPS58127376A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163759U (ja) * 1984-04-05 1985-10-30 株式会社明電舎 ゲ−トタ−ンオフサイリスタ
JPS6130259U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS6130258U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS6130257U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS63122270A (ja) * 1986-11-12 1988-05-26 Toshiba Components Kk サイリスタ
JP2760984B2 (ja) * 1987-02-26 1998-06-04 株式会社東芝 絶縁ゲート型サイリスタ

Also Published As

Publication number Publication date
JPS58127376A (ja) 1983-07-29

Similar Documents

Publication Publication Date Title
CN1051643C (zh) 功率集成电路
JP2658427B2 (ja) 電力変換用半導体素子のスナバ回路とそのモジュール装置
JP3074736B2 (ja) 半導体装置
JPH069018B2 (ja) 半導体構造
JPH0145296B2 (cs)
USRE35854E (en) Programmable protection circuit and its monolithic manufacturing
US4791470A (en) Reverse conducting gate turn-off thyristor device
JPH073854B2 (ja) 複合半導体装置
US4509089A (en) Two-pole overcurrent protection device
US5077590A (en) High voltage semiconductor device
JPH0547992B2 (cs)
US4612562A (en) PNPN switch device with capacitor formed outside active device areas
JP3183020B2 (ja) 保護回路を内蔵した絶縁ゲート型半導体装置
JPH0266975A (ja) 半導体装置
JPH0787247B2 (ja) 半導体装置
JP2621507B2 (ja) 絶縁ゲート形半導体素子
JPS62235785A (ja) 縦型電界効果トランジスタ
JPS62295443A (ja) 半導体装置
JPS5895856A (ja) 半導体装置
JP2000217337A (ja) 半導体装置及び電力変換装置
US6462968B2 (en) Reverse conducting GCT (Gate Commutated Thyristor) and application of such a GCT
JPH08204180A (ja) 大容量半導体装置
JPS6048911B2 (ja) 半導体装置
JP2004152861A (ja) 半導体装置
JPH01186664A (ja) 入力回路