JPH0547983B2 - - Google Patents

Info

Publication number
JPH0547983B2
JPH0547983B2 JP58214156A JP21415683A JPH0547983B2 JP H0547983 B2 JPH0547983 B2 JP H0547983B2 JP 58214156 A JP58214156 A JP 58214156A JP 21415683 A JP21415683 A JP 21415683A JP H0547983 B2 JPH0547983 B2 JP H0547983B2
Authority
JP
Japan
Prior art keywords
power supply
conductor
gate
drain
supply conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58214156A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60107868A (ja
Inventor
Jun Fukaya
Yutaka Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58214156A priority Critical patent/JPS60107868A/ja
Publication of JPS60107868A publication Critical patent/JPS60107868A/ja
Publication of JPH0547983B2 publication Critical patent/JPH0547983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/90—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10W72/932—

Landscapes

  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58214156A 1983-11-16 1983-11-16 半導体装置 Granted JPS60107868A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58214156A JPS60107868A (ja) 1983-11-16 1983-11-16 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58214156A JPS60107868A (ja) 1983-11-16 1983-11-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS60107868A JPS60107868A (ja) 1985-06-13
JPH0547983B2 true JPH0547983B2 (enExample) 1993-07-20

Family

ID=16651150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58214156A Granted JPS60107868A (ja) 1983-11-16 1983-11-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS60107868A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328074A (ja) * 1986-07-21 1988-02-05 Nec Corp マイクロ波電界効果トランジスタ
JPH07120677B2 (ja) * 1987-01-28 1995-12-20 日本電気株式会社 マイクロ波スイツチ
US6530068B1 (en) * 1999-08-03 2003-03-04 Advanced Micro Devices, Inc. Device modeling and characterization structure with multiplexed pads
US20170301766A1 (en) * 2014-09-17 2017-10-19 Sharp Kabushiki Kaisha Compound semiconductor field effect transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228788Y2 (enExample) * 1980-01-29 1987-07-23

Also Published As

Publication number Publication date
JPS60107868A (ja) 1985-06-13

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