JPH0547666Y2 - - Google Patents

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Publication number
JPH0547666Y2
JPH0547666Y2 JP1985036156U JP3615685U JPH0547666Y2 JP H0547666 Y2 JPH0547666 Y2 JP H0547666Y2 JP 1985036156 U JP1985036156 U JP 1985036156U JP 3615685 U JP3615685 U JP 3615685U JP H0547666 Y2 JPH0547666 Y2 JP H0547666Y2
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JP
Japan
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cards
color
display
present
photograph
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Expired - Lifetime
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JP1985036156U
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English (en)
Japanese (ja)
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JPS61152477U (h
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Priority to JP1985036156U priority Critical patent/JPH0547666Y2/ja
Publication of JPS61152477U publication Critical patent/JPS61152477U/ja
Application granted granted Critical
Publication of JPH0547666Y2 publication Critical patent/JPH0547666Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP1985036156U 1985-03-15 1985-03-15 Expired - Lifetime JPH0547666Y2 (h)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985036156U JPH0547666Y2 (h) 1985-03-15 1985-03-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985036156U JPH0547666Y2 (h) 1985-03-15 1985-03-15

Publications (2)

Publication Number Publication Date
JPS61152477U JPS61152477U (h) 1986-09-20
JPH0547666Y2 true JPH0547666Y2 (h) 1993-12-15

Family

ID=30541087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985036156U Expired - Lifetime JPH0547666Y2 (h) 1985-03-15 1985-03-15

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JP (1) JPH0547666Y2 (h)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7175713B2 (en) 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7270709B2 (en) 2002-07-17 2007-09-18 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US7294208B2 (en) 2002-07-29 2007-11-13 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7416979B2 (en) 2001-07-25 2008-08-26 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US7422637B2 (en) 2002-10-09 2008-09-09 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7611990B2 (en) 2001-07-25 2009-11-03 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US9209074B2 (en) 2001-07-25 2015-12-08 Applied Materials, Inc. Cobalt deposition on barrier surfaces

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2551414B2 (ja) * 1986-09-24 1996-11-06 大日本印刷株式会社 被転写シ−トおよび装飾方法
JPH0751342Y2 (ja) * 1987-01-27 1995-11-22 日本電信電話株式会社 カード

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911537A (ja) * 1982-07-09 1984-01-21 Dainippon Printing Co Ltd 磁気カ−ド

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7611990B2 (en) 2001-07-25 2009-11-03 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US9209074B2 (en) 2001-07-25 2015-12-08 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US7416979B2 (en) 2001-07-25 2008-08-26 Applied Materials, Inc. Deposition methods for barrier and tungsten materials
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US7175713B2 (en) 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7514358B2 (en) 2002-03-04 2009-04-07 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7588736B2 (en) 2002-07-17 2009-09-15 Applied Materials, Inc. Apparatus and method for generating a chemical precursor
US7429361B2 (en) 2002-07-17 2008-09-30 Applied Materials, Inc. Method and apparatus for providing precursor gas to a processing chamber
US7569191B2 (en) 2002-07-17 2009-08-04 Applied Materials, Inc. Method and apparatus for providing precursor gas to a processing chamber
US7270709B2 (en) 2002-07-17 2007-09-18 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US7597758B2 (en) 2002-07-17 2009-10-06 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US7294208B2 (en) 2002-07-29 2007-11-13 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7422637B2 (en) 2002-10-09 2008-09-09 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7402210B2 (en) 2002-11-14 2008-07-22 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7591907B2 (en) 2002-11-14 2009-09-22 Applied Materials, Inc. Apparatus for hybrid chemical processing
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7547952B2 (en) 2003-04-04 2009-06-16 Applied Materials, Inc. Method for hafnium nitride deposition
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus

Also Published As

Publication number Publication date
JPS61152477U (h) 1986-09-20

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