JPH0546705B2 - - Google Patents
Info
- Publication number
- JPH0546705B2 JPH0546705B2 JP60278367A JP27836785A JPH0546705B2 JP H0546705 B2 JPH0546705 B2 JP H0546705B2 JP 60278367 A JP60278367 A JP 60278367A JP 27836785 A JP27836785 A JP 27836785A JP H0546705 B2 JPH0546705 B2 JP H0546705B2
- Authority
- JP
- Japan
- Prior art keywords
- drain
- region
- source
- channel region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 4
- 108091006146 Channels Proteins 0.000 description 19
- 238000010586 diagram Methods 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 8
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27836785A JPS62136077A (ja) | 1985-12-10 | 1985-12-10 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27836785A JPS62136077A (ja) | 1985-12-10 | 1985-12-10 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136077A JPS62136077A (ja) | 1987-06-19 |
| JPH0546705B2 true JPH0546705B2 (de) | 1993-07-14 |
Family
ID=17596352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27836785A Granted JPS62136077A (ja) | 1985-12-10 | 1985-12-10 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136077A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1313571C (en) * | 1987-10-26 | 1993-02-09 | John W. Palmour | Metal oxide semiconductor field-effect transistor formed in silicon carbide |
| JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117587A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Insulating gate type field effect semiconductor device |
-
1985
- 1985-12-10 JP JP27836785A patent/JPS62136077A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117587A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Insulating gate type field effect semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62136077A (ja) | 1987-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2773487B2 (ja) | トンネルトランジスタ | |
| JP2773474B2 (ja) | 半導体装置 | |
| US4471366A (en) | Field effect transistor with high cut-off frequency and process for forming same | |
| US5391897A (en) | Status induction semiconductor device | |
| JPS62274783A (ja) | 半導体装置 | |
| US5107314A (en) | Gallium antimonide field-effect transistor | |
| JPH07142706A (ja) | ヘテロ接合半導体装置の製造方法およびヘテロ接合半導体装置 | |
| JPH0546705B2 (de) | ||
| JP2701583B2 (ja) | トンネルトランジスタ及びその製造方法 | |
| JP2800675B2 (ja) | トンネルトランジスタ | |
| JPH088360B2 (ja) | トンネルトランジスタおよびその製造方法 | |
| JPS63244779A (ja) | 電界効果トランジスタ | |
| JP2778447B2 (ja) | トンネルトランジスタおよびその製造方法 | |
| JPS60136380A (ja) | 半導体装置 | |
| JP3746303B2 (ja) | 電界効果トランジスタ | |
| JPH025438A (ja) | 絶縁ゲート型電界効果トランジスタ | |
| JP2710312B2 (ja) | 半導体装置 | |
| JP4108252B2 (ja) | 電子デバイス | |
| JPH0362302B2 (de) | ||
| JPH10190003A (ja) | 半導体装置及びその製造方法 | |
| JPH08148670A (ja) | 半導体装置 | |
| JPH0226791B2 (de) | ||
| JPH0586873B2 (de) | ||
| JPS60145671A (ja) | 集積型半導体装置 | |
| JPS63186479A (ja) | 電界効果トランジスタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |