JPH0546705B2 - - Google Patents

Info

Publication number
JPH0546705B2
JPH0546705B2 JP27836785A JP27836785A JPH0546705B2 JP H0546705 B2 JPH0546705 B2 JP H0546705B2 JP 27836785 A JP27836785 A JP 27836785A JP 27836785 A JP27836785 A JP 27836785A JP H0546705 B2 JPH0546705 B2 JP H0546705B2
Authority
JP
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27836785A
Other versions
JPS62136077A (en )
Inventor
Toshio Baba
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

JP27836785A 1985-12-10 1985-12-10 Expired - Lifetime JPH0546705B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27836785A JPH0546705B2 (en) 1985-12-10 1985-12-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27836785A JPH0546705B2 (en) 1985-12-10 1985-12-10

Publications (2)

Publication Number Publication Date
JPS62136077A true JPS62136077A (en) 1987-06-19
JPH0546705B2 true JPH0546705B2 (en) 1993-07-14

Family

ID=17596352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27836785A Expired - Lifetime JPH0546705B2 (en) 1985-12-10 1985-12-10

Country Status (1)

Country Link
JP (1) JPH0546705B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1313571C (en) * 1987-10-26 1993-02-09 John W. Palmour Metal oxide semiconductor field-effect transistor formed in silicon carbide
JP2542448B2 (en) * 1990-05-24 1996-10-09 シャープ株式会社 Field-effect transistor and a method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117587A (en) * 1976-03-30 1977-10-03 Nec Corp Insulating gate type field effect semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117587A (en) * 1976-03-30 1977-10-03 Nec Corp Insulating gate type field effect semiconductor device

Also Published As

Publication number Publication date Type
JPS62136077A (en) 1987-06-19 application

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term