JPH0544184B2 - - Google Patents

Info

Publication number
JPH0544184B2
JPH0544184B2 JP57053539A JP5353982A JPH0544184B2 JP H0544184 B2 JPH0544184 B2 JP H0544184B2 JP 57053539 A JP57053539 A JP 57053539A JP 5353982 A JP5353982 A JP 5353982A JP H0544184 B2 JPH0544184 B2 JP H0544184B2
Authority
JP
Japan
Prior art keywords
thin film
layer
silicon
film semiconductor
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57053539A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58169977A (ja
Inventor
Masaki Fukaya
Osamu Takamatsu
Mitsutoshi Kuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP57053539A priority Critical patent/JPS58169977A/ja
Publication of JPS58169977A publication Critical patent/JPS58169977A/ja
Publication of JPH0544184B2 publication Critical patent/JPH0544184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP57053539A 1982-03-30 1982-03-30 薄膜トランジスタの製造方法 Granted JPS58169977A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57053539A JPS58169977A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57053539A JPS58169977A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58169977A JPS58169977A (ja) 1983-10-06
JPH0544184B2 true JPH0544184B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-05

Family

ID=12945605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57053539A Granted JPS58169977A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58169977A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999690A (en) * 1989-12-19 1991-03-12 Texas Instruments Incorporated Transistor
US5231296A (en) * 1989-12-19 1993-07-27 Texas Instruments Incorporated Thin film transistor structure with insulating mask
JPH06132304A (ja) * 1992-03-03 1994-05-13 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687362A (en) * 1979-12-18 1981-07-15 Toshiba Corp Manufacture of semiconductor device
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS56161656A (en) * 1980-05-16 1981-12-12 Nec Kyushu Ltd Manufacture of semiconductor device
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays

Also Published As

Publication number Publication date
JPS58169977A (ja) 1983-10-06

Similar Documents

Publication Publication Date Title
JPS58115864A (ja) 半導体装置
JPS62177909A (ja) 半導体装置の製造方法
US5639344A (en) Etching material and etching process
US5238849A (en) Method of fabricating semiconductor device
JPH06196703A (ja) 薄膜トランジスタ及びその製造方法
JPH0547791A (ja) 薄膜トランジスタの製造方法
JPH11102907A (ja) 半導体装置の製造方法および絶縁膜形成装置
JPH0544184B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6133253B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3055782B2 (ja) 薄膜トランジスタの製造方
JP2864658B2 (ja) 薄膜トランジスタの製造方法
JPS59113666A (ja) 薄膜トランジスタの製造方法
JP4214561B2 (ja) 薄膜トランジスタの製造方法
JPH0447970B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04328872A (ja) 多結晶薄膜トランジスタの製造方法及び多結晶薄膜トランジスタ
JPH0464181B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR100218536B1 (ko) 바이폴라트랜지스터의제조방법
JPH0578948B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6122872B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6120154B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04111310A (ja) 半導体装置及びその製法
JPH0563946B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0682628B2 (ja) 半導体装置の製造方法
JPH0254659B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63119269A (ja) 薄膜トランジスタの製造方法