JPH0544169B2 - - Google Patents
Info
- Publication number
- JPH0544169B2 JPH0544169B2 JP58016588A JP1658883A JPH0544169B2 JP H0544169 B2 JPH0544169 B2 JP H0544169B2 JP 58016588 A JP58016588 A JP 58016588A JP 1658883 A JP1658883 A JP 1658883A JP H0544169 B2 JPH0544169 B2 JP H0544169B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- substrate
- thin film
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58016588A JPS59141230A (ja) | 1983-02-02 | 1983-02-02 | パタ−ン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58016588A JPS59141230A (ja) | 1983-02-02 | 1983-02-02 | パタ−ン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59141230A JPS59141230A (ja) | 1984-08-13 |
JPH0544169B2 true JPH0544169B2 (it) | 1993-07-05 |
Family
ID=11920429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58016588A Granted JPS59141230A (ja) | 1983-02-02 | 1983-02-02 | パタ−ン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59141230A (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2617923B2 (ja) * | 1986-09-16 | 1997-06-11 | 松下電子工業株式会社 | パターン形成方法 |
JPH0348253A (ja) * | 1989-07-17 | 1991-03-01 | Nippon Telegr & Teleph Corp <Ntt> | パタン形成方法 |
JPH05152199A (ja) * | 1991-11-27 | 1993-06-18 | Nec Kansai Ltd | レジストパターン形成方法 |
KR0172237B1 (ko) * | 1995-06-26 | 1999-03-30 | 김주용 | 반도체 소자의 미세패턴 형성방법 |
JP2924723B2 (ja) * | 1995-08-16 | 1999-07-26 | 日本電気株式会社 | ドライエッチング方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110974A (it) * | 1975-03-25 | 1976-09-30 | Sanyo Electric Co | |
JPS5655943A (en) * | 1979-10-12 | 1981-05-16 | Fujitsu Ltd | Pattern forming method |
JPS5676530A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Exposure of resist |
JPS5712522A (en) * | 1980-06-27 | 1982-01-22 | Hitachi Ltd | Forming method of pattern |
-
1983
- 1983-02-02 JP JP58016588A patent/JPS59141230A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110974A (it) * | 1975-03-25 | 1976-09-30 | Sanyo Electric Co | |
JPS5655943A (en) * | 1979-10-12 | 1981-05-16 | Fujitsu Ltd | Pattern forming method |
JPS5676530A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Exposure of resist |
JPS5712522A (en) * | 1980-06-27 | 1982-01-22 | Hitachi Ltd | Forming method of pattern |
Also Published As
Publication number | Publication date |
---|---|
JPS59141230A (ja) | 1984-08-13 |
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