JPH0543286B2 - - Google Patents

Info

Publication number
JPH0543286B2
JPH0543286B2 JP63229343A JP22934388A JPH0543286B2 JP H0543286 B2 JPH0543286 B2 JP H0543286B2 JP 63229343 A JP63229343 A JP 63229343A JP 22934388 A JP22934388 A JP 22934388A JP H0543286 B2 JPH0543286 B2 JP H0543286B2
Authority
JP
Japan
Prior art keywords
boron
pbn
diffusion
boron nitride
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63229343A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0277118A (ja
Inventor
Yoshuki Mori
Shigenari Suzuki
Yoshiaki Fushiki
Sadaisa Kumai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP22934388A priority Critical patent/JPH0277118A/ja
Publication of JPH0277118A publication Critical patent/JPH0277118A/ja
Publication of JPH0543286B2 publication Critical patent/JPH0543286B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP22934388A 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法 Granted JPH0277118A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22934388A JPH0277118A (ja) 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22934388A JPH0277118A (ja) 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法

Publications (2)

Publication Number Publication Date
JPH0277118A JPH0277118A (ja) 1990-03-16
JPH0543286B2 true JPH0543286B2 (enrdf_load_stackoverflow) 1993-07-01

Family

ID=16890674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22934388A Granted JPH0277118A (ja) 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法

Country Status (1)

Country Link
JP (1) JPH0277118A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2583681B2 (ja) * 1991-03-20 1997-02-19 信越半導体株式会社 半導体ウェーハへの硼素拡散方法
JPH0812849B2 (ja) * 1991-05-31 1996-02-07 株式会社日立製作所 太陽電池の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525486B2 (enrdf_load_stackoverflow) * 1972-07-07 1980-07-07
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源

Also Published As

Publication number Publication date
JPH0277118A (ja) 1990-03-16

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