JPH0371398B2 - - Google Patents

Info

Publication number
JPH0371398B2
JPH0371398B2 JP59099463A JP9946384A JPH0371398B2 JP H0371398 B2 JPH0371398 B2 JP H0371398B2 JP 59099463 A JP59099463 A JP 59099463A JP 9946384 A JP9946384 A JP 9946384A JP H0371398 B2 JPH0371398 B2 JP H0371398B2
Authority
JP
Japan
Prior art keywords
silicon
single crystal
wafer
silicon single
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59099463A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60246297A (ja
Inventor
Katsuhiko Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP9946384A priority Critical patent/JPS60246297A/ja
Publication of JPS60246297A publication Critical patent/JPS60246297A/ja
Publication of JPH0371398B2 publication Critical patent/JPH0371398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9946384A 1984-05-17 1984-05-17 窒素ド−プシリコン単結晶の製造方法 Granted JPS60246297A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9946384A JPS60246297A (ja) 1984-05-17 1984-05-17 窒素ド−プシリコン単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9946384A JPS60246297A (ja) 1984-05-17 1984-05-17 窒素ド−プシリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60246297A JPS60246297A (ja) 1985-12-05
JPH0371398B2 true JPH0371398B2 (enrdf_load_stackoverflow) 1991-11-13

Family

ID=14248003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9946384A Granted JPS60246297A (ja) 1984-05-17 1984-05-17 窒素ド−プシリコン単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60246297A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4779519B2 (ja) * 2005-09-08 2011-09-28 株式会社Sumco エピタキシャルウェーハの製造方法
TWI541864B (zh) * 2012-12-06 2016-07-11 世創電子材料公司 磊晶晶圓及其製造方法

Also Published As

Publication number Publication date
JPS60246297A (ja) 1985-12-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term