JPH0371398B2 - - Google Patents
Info
- Publication number
- JPH0371398B2 JPH0371398B2 JP59099463A JP9946384A JPH0371398B2 JP H0371398 B2 JPH0371398 B2 JP H0371398B2 JP 59099463 A JP59099463 A JP 59099463A JP 9946384 A JP9946384 A JP 9946384A JP H0371398 B2 JPH0371398 B2 JP H0371398B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- wafer
- silicon single
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9946384A JPS60246297A (ja) | 1984-05-17 | 1984-05-17 | 窒素ド−プシリコン単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9946384A JPS60246297A (ja) | 1984-05-17 | 1984-05-17 | 窒素ド−プシリコン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60246297A JPS60246297A (ja) | 1985-12-05 |
JPH0371398B2 true JPH0371398B2 (enrdf_load_stackoverflow) | 1991-11-13 |
Family
ID=14248003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9946384A Granted JPS60246297A (ja) | 1984-05-17 | 1984-05-17 | 窒素ド−プシリコン単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60246297A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4779519B2 (ja) * | 2005-09-08 | 2011-09-28 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
TWI541864B (zh) * | 2012-12-06 | 2016-07-11 | 世創電子材料公司 | 磊晶晶圓及其製造方法 |
-
1984
- 1984-05-17 JP JP9946384A patent/JPS60246297A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60246297A (ja) | 1985-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |