JPH0277118A - 半導体ウェーハへの硼素拡散方法 - Google Patents

半導体ウェーハへの硼素拡散方法

Info

Publication number
JPH0277118A
JPH0277118A JP22934388A JP22934388A JPH0277118A JP H0277118 A JPH0277118 A JP H0277118A JP 22934388 A JP22934388 A JP 22934388A JP 22934388 A JP22934388 A JP 22934388A JP H0277118 A JPH0277118 A JP H0277118A
Authority
JP
Japan
Prior art keywords
boron
pbn
diffusion
silicon wafer
wafer surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22934388A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543286B2 (enrdf_load_stackoverflow
Inventor
Yoshiyuki Mori
森　義之
Shigenari Suzuki
鈴木　成就
Yoshiaki Fushiki
芳明 伏木
Sadatoshi Kumai
熊井　貞勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP22934388A priority Critical patent/JPH0277118A/ja
Publication of JPH0277118A publication Critical patent/JPH0277118A/ja
Publication of JPH0543286B2 publication Critical patent/JPH0543286B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP22934388A 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法 Granted JPH0277118A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22934388A JPH0277118A (ja) 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22934388A JPH0277118A (ja) 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法

Publications (2)

Publication Number Publication Date
JPH0277118A true JPH0277118A (ja) 1990-03-16
JPH0543286B2 JPH0543286B2 (enrdf_load_stackoverflow) 1993-07-01

Family

ID=16890674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22934388A Granted JPH0277118A (ja) 1988-09-13 1988-09-13 半導体ウェーハへの硼素拡散方法

Country Status (1)

Country Link
JP (1) JPH0277118A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354165A (ja) * 1991-05-31 1992-12-08 Hitachi Ltd 太陽電池の製造方法
JPH0574727A (ja) * 1991-03-20 1993-03-26 Shin Etsu Handotai Co Ltd 半導体ウエーハへの硼素拡散方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926748A (enrdf_load_stackoverflow) * 1972-07-07 1974-03-09
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926748A (enrdf_load_stackoverflow) * 1972-07-07 1974-03-09
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0574727A (ja) * 1991-03-20 1993-03-26 Shin Etsu Handotai Co Ltd 半導体ウエーハへの硼素拡散方法
EP0504857A3 (en) * 1991-03-20 1995-04-12 Shinetsu Handotai Kk Process of diffusing boron into semiconductor wafers
JPH04354165A (ja) * 1991-05-31 1992-12-08 Hitachi Ltd 太陽電池の製造方法

Also Published As

Publication number Publication date
JPH0543286B2 (enrdf_load_stackoverflow) 1993-07-01

Similar Documents

Publication Publication Date Title
US8512471B2 (en) Halosilane assisted PVT growth of SiC
JPH01162326A (ja) β−炭化シリコン層の製造方法
EP3626865A1 (en) Susceptor and method for manufacturing the same
US4235650A (en) Open tube aluminum diffusion
US4137108A (en) Process for producing a semiconductor device by vapor growth of single crystal Al2 O3
JP3312553B2 (ja) シリコン単結晶およびシリコン単結晶薄膜の製造方法
KR101031407B1 (ko) 단결정 실리콘 탄화물의 형성방법
JP2583681B2 (ja) 半導体ウェーハへの硼素拡散方法
JPS62101026A (ja) 不純物拡散源
JPH0277118A (ja) 半導体ウェーハへの硼素拡散方法
JP3344205B2 (ja) シリコンウェーハの製造方法及びシリコンウェーハ
US5846321A (en) Method of producing single crystal thin film
JPH0245326B2 (enrdf_load_stackoverflow)
JP3657036B2 (ja) 炭化ケイ素薄膜および炭化ケイ素薄膜積層基板の製造方法
JPH1116903A (ja) 湿式酸化を用いた薄膜酸化膜の形成方法
JPH0782997B2 (ja) 半導体ウェーハの製造方法
JPS6226569B2 (enrdf_load_stackoverflow)
JPH08217592A (ja) シリコン単結晶製造用石英ルツボ
JPS6242517A (ja) 半導体気相処理方法
JPH0770496B2 (ja) 半導体装置の製造法
JPH09266175A (ja) 半導体ウェーハの製造方法及び半導体ウェーハ
JPH06219835A (ja) 耐酸化性に優れた黒鉛−炭化珪素複合体及びその製造方法
KR101116697B1 (ko) 규화금속 나노와이어의 제조방법
Görög et al. Epitaxial growth of AIIIBV semiconductors from vapour phase
JPS63181314A (ja) ３−５族化合物半導体結晶のド−ピング方法