JPH0543178B2 - - Google Patents

Info

Publication number
JPH0543178B2
JPH0543178B2 JP59098091A JP9809184A JPH0543178B2 JP H0543178 B2 JPH0543178 B2 JP H0543178B2 JP 59098091 A JP59098091 A JP 59098091A JP 9809184 A JP9809184 A JP 9809184A JP H0543178 B2 JPH0543178 B2 JP H0543178B2
Authority
JP
Japan
Prior art keywords
semiconductor
base
gaas
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59098091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60242671A (ja
Inventor
Takayuki Sugata
Tadao Ishibashi
Hiroshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59098091A priority Critical patent/JPS60242671A/ja
Publication of JPS60242671A publication Critical patent/JPS60242671A/ja
Publication of JPH0543178B2 publication Critical patent/JPH0543178B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/881—Resonant tunnelling transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 

Landscapes

  • Bipolar Transistors (AREA)
JP59098091A 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ Granted JPS60242671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59098091A JPS60242671A (ja) 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59098091A JPS60242671A (ja) 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ

Publications (2)

Publication Number Publication Date
JPS60242671A JPS60242671A (ja) 1985-12-02
JPH0543178B2 true JPH0543178B2 (enrdf_load_stackoverflow) 1993-06-30

Family

ID=14210668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59098091A Granted JPS60242671A (ja) 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ

Country Status (1)

Country Link
JP (1) JPS60242671A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2191035A (en) * 1986-05-23 1987-12-02 Philips Electronic Associated Hot charge-carrier transistors
US4771013A (en) * 1986-08-01 1988-09-13 Texas Instruments Incorporated Process of making a double heterojunction 3-D I2 L bipolar transistor with a Si/Ge superlattice
DE3780284T2 (de) * 1986-12-22 1993-01-07 Nippon Electric Co Bipolarer heterouebergangs-transistor mit ballistischem betrieb.
JP2533541B2 (ja) * 1987-06-08 1996-09-11 株式会社日立製作所 ヘテロ接合バイポ−ラトランジスタ
US7170112B2 (en) * 2002-10-30 2007-01-30 International Business Machines Corporation Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
JP5649219B2 (ja) * 2011-01-24 2015-01-07 Ｎｔｔエレクトロニクス株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665216B2 (ja) * 1981-12-28 1994-08-22 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPS60242671A (ja) 1985-12-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term